Ⅲ–Ⅴ compounds as single photon emitters

查看全文 作　　者：Xu [1,2]Wang;Lei [1]Xu;Yun [1]Jiang;Zhouyang [1]Yin;Christopher C. S. [3]Chan;Chaoyong [1]Deng;Robert A. [4]Taylor

机构地区：[1]Key Laboratory of Electronic Functional Composite Materials of Guizhou Province, Guizhou University, Guiyang 550025, China;[2]Guizhou Institute of Quantum Information and Big Data Applied Technology, Guiyang 550002, China;[3]Department of Physics, The Hong Kong University of Science and Technology, Hong Kong 999077, China;[4]Department of Physics, University of Oxford, Clarendon Laboratory, Oxford, OX1 3PU, UK

出　　处：《Journal of Semiconductors》索引2019年第40卷第7期,共12页

摘　　要：Single-photon emitters (SPEs) are one of the key components in quantum information applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high purity and distinguishability. SPEs can also be integrated in photonic circuits for scalable quantum communication and quantum computer systems. Quantum dots made from Ⅲ-Ⅴ compounds such as InGaAs or GaN have been found to be particularly attractive SPE sources due to their well studied optical performance and state of the art industrial flexibility in fabrication and integration. Here, we review the optical and optoelectronic properties and growth methods of general SPEs. Subsequently, a brief summary of the latest advantages in Ⅲ-Ⅴ compound SPEs and the research progress achieved in the past few years will be discussed. We finally describe frontier challenges and conclude with the latest SPE fabrication science and technology that can open new possibilities for quantum information applications. 关键词：single PHOTON EMITTERS solid-states QUANTUM DOTS 2D materials

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Ⅲ–Ⅴ compounds as single photon emitters

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