Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

查看全文 作　　者：C.Trager-[1]Cowan;[1]A.Alasmari;[1]W.Avis;[1]J.Bruckbauer;[1]P.R.Edwards;[1]B.Hourahine;[1]S.Kraeusel;[1]G.Kusch;[1]R.Johnston;G.Naresh-[1]Kumar;[1]R.W.Martin;M.Nouf-[1]Allehiani;[1]E.Pascal;[1]L.Spasevski;[1]D.Thomson;[1]S.Vespucci;[2]P.J.Parbrook;[2]M.D.Smith;[3]J.Enslin;[3]F.Mehnke;[3,4]M.Kneissl;[3]C.Kuhn;[3]T.Wernicke;[4]S.Hagedorn;[4]A.Knauer;[4]V.Kueller;[4]S.Walde;[4]M.Weyers;P.-[5]M.Coulon;[5]P.A.Shields;[6]Y.Zhang;[6]L.Jiu;[6]Y.Gong;[6]R.M.Smith;[6]T.Wang;[1,7]A.Winkelmann 机构地区：[1]Department of physics,supa,university of strathclyde,glasgow G4 ong,uk;[2]Tyndall national institute,university college cork,cork t12 r5cp,ireland;[3]Institute of solid state physics,lechnische universitat berlin1,0623 berlin,germany;[4]Ferdinand-braun-lnstitut,leibniz-lnstitut fur hochstfrequenztechnik124,89 berlin,germany;[5]Department of electronic and electrical engineering,centre of nanoscience&nanotechnology,university of bath,bath ba27ay,uk;[6]Department of electronic and electrical engineering,university of sheffield,sheffield s13jd,uk;[7]Laser components department,laser zentrum hannover 5.v.3,0419 hannover,germany 出　　处：《Photonics Research》索引2019年第7卷第11期,共10页 基　　金：financial support of the Engineering and Physical Sciences Research Council, UK via Grant No. EP/J015792/1,“Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC”;Grant No. EP/M015181/ 1, “Manufacturing nano-engineered III-nitrides”;Grant No. EP/P015719/1, “Quantitative non-destructive nanoscale characterisation of advanced materials”;partially supported by the German “Federal Ministry of Education and Research” (BMBF) within the “Advanced UV for Life” consortium;the “German Research Foundation” (DFG) within the “Collaborative Research Center 787” 摘　　要：In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques. 关 键 词：ELECTRON NITRIDE DOPING