Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromorphic computing

查看全文 作　　者：YiLin [1,2]Fang;Tuo [2,3,4]Shi;XuMeng [2,3]Zhang;ZuHeng [2,3]Wu;JunJie [1,2]An;JinSong [1,2]Wei;Jian [1,2]Lu;Qi [2,3]Liu 机构地区：[1]School of Information Science and Technology,University of Science and Technology of China,Hefei 230027,China;[2]Key Laboratory of Microelectronics Device&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;[3]University of Chinese Academy of Sciences,Beijing 100049,China;[4]Zhejiang Laboratory,Hangzhou 311122,China 出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2020年第63卷第9期,共6页 基　　金：the National Key R&D Program of China(Grant No.2017YFB0405600);the National Natural Science Foundation of China(Grant Nos.61751401,61804171,61825404,61732020,61821091,61851402);the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB44000000);the Major Scientific Research Project of Zhejiang Lab(Grant No.2019KC0AD02)。 摘　　要：In this work,by incorporating different electrodes(Ta/Ti)onto TaOxdielectric layer,we studied both the conductance reading and conductance updating(long term potentiation and depression)linearities in the two RRAM devices.Owing to the composition modulation(CM)mechanism,the Ta-electrode device shows better conductance reading and updating linearities.The RRAM device linearities directly influence the performance of the neural network when the devices are used as synapses.System evaluation of a two-layer neural network considering the conductance reading and updating linearity factors further confirm that both the training and inference accuracies of Ta electrode device are better than those of the Ti electrode one.We believe that this work could serve as a powerful reference for engineering synaptic devices with good linearity for neuromorphic computing applications. 关 键 词：RRAM conductance reading linearity conductance updating linearity neuromorphic computing