|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Memory materials and devices:From concept to application显示文摘Memory cells have always been an important element of information technology.With emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology.As is well known,better data storage is mostly achieved by miniaturization.However,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory units.To meet the increasing demands of information technology,novel and high-performance memory is urgently needed.Fortunately,emerging memory technologies are expected to improve memory performance and drive the information revolution.This review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review. | Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou | 2020 | InfoMat2020，2，2： | 15 |
| 2 | Nonvolatile resistive switching memories-characteristics,mechanisms and challenges | Feng PAN,Chao CHEN,Zhi-shun WANG,Yu-chao YANG,Jing YANG,Fei ZENG Laboratory of Advanced Materials,Department of Materials Science and Engineering, Tsinghua University,Beijing 100084,China | 2010 | Progress in Natural Science:Materials International2010，20，1： | 10 |
| 3 | Effects of interaction between defects on the uniformity of doping HfO_2-based RRAM:a first principle study显示文摘The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO2 resistive random access memory (RRAM) devices is proposed from another perspective: defects interactions, based on first principle calculations. In doped HfO2, dopant is proved to have a localized effect on the formation of defects and the interactions between them. In addition, both effects cause oxygen vacancies (Vo) to have a tendency to form clusters and these clusters are easy to form around the dopant. It is proved that this process can improve the performance of material through projected density of states (PDOS) analysis. For Vo filament-type RRAM devices, these clusters are concluded to be helpful for the controllability of the switching process in which oxygen vacancy filaments form and break. Therefore, improved uniformity and operation voltage ofAl-doped HfO2 RRAM devices is achieved. | 赵强 周茂秀 张伟 刘琦 李晓风 刘明 代月花 | 2013 | Journal of Semiconductors2013，34，3： | 6 |
| 4 | 半导体存储器技术显示文摘半导体存储器是市场份额最大的单一集成电路产品,广泛应用于信息、航空/航天、军事/国防、新能源和科学研究等领域,有着巨大的市场。概述了DRAM和闪存、新型非易失存储器的发展现状及课题组在存储器领域的相关进展。 | 刘明 | 2019 | 科技导报2019，37，3： | 4 |
| 5 | Low power and high uniformity of HfO_x-based RRAM via tip-enhanced electric fields显示文摘In this paper, the HfO_x-based resistive random access memory(RRAM) devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage(1.97/0.7V) and faster switching speed(≤30 ns under 0.9V pulse) as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition,the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application. | Xiaokang LI Baotong ZHANG Bowen WANG Xiaoyan XU Yuancheng YANG Shuang SUN Qifeng CAI Shijie HU Xia AN Ming LI Ru HUANG | 2019 | Science China(Information Sciences)2019，62，10： | 3 |
| 6 | The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO4-based resistive switching memory显示文摘Resistive random access memory(RRAM)has emerged as a new discipline promoting the development of new materials and devices toward a broad range of electronic and energy applications.Here,we realized a memristive device with weak dependence on the top electrodes and demonstrated the quantized conductance(QC)nature in BiVO4 matrix.The electronic properties have been investigated by the measurements of I-V curves,where the resistive switching(RS)phenomenon with stable switching ratio and excellent longterm retention capabilities are identified.Two more inert materials,TiN and Pd,are applied as the top electrodes to exclude the influence of electrodes on the RS states and QC behavior.The X-ray photoelectron spectroscopy results and transport measurements reveal that the conductive filament(CF)is composed by elemental bismuth.The naturally existed oxygen vacancies in BiVO4 matrix plays as the role of catalyst in the formation and dissolution of CF in BiVO4-based RRAM device,which is the primary cause for the observed weak dependence of switching performance in this device on the type of top electrodes.Our results clearly illustrate that BiVO4 could be a new idea platform to realize the high scalability,high cycling endurance,and multilevel storage RRAM devices. | Mengting Zhao Xiaobing Yan Long Ren Mengliu Zhao Fei Guo Jincheng Zhuang Yi Du Weichang Hao | 2020 | InfoMat2020，2，5： | 2 |
| 7 | Towards engineering in memristors for emerging memory and neuromorphic computing: A review显示文摘Resistive random-access memory(RRAM),also known as memristors,having a very simple device structure with two terminals,fulfill almost all of the fundamental requirements of volatile memory,nonvolatile memory,and neuromorphic characteristics.Its memory and neuromorphic behaviors are currently being explored in relation to a range of materials,such as biological materials,perovskites,2D materials,and transition metal oxides.In this review,we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching mechanisms.We then discuss emergent memory technologies using memristors,together with its potential neuromorphic applications,by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices,in areas such as ION/IOFF ratio,endurance,spike time-dependent plasticity(STDP),and paired-pulse facilitation(PPF),among others.The emulation of essential biological synaptic functions realized in various switching materials,including inorganic metal oxides and new organic materials,as well as diverse device structures such as single-layer and multilayer hetero-structured devices,and crossbar arrays,is analyzed in detail.Finally,we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors. | Andrey S.Sokolov Haider Abbas Yawar Abbas Changhwan Choi | 2021 | Journal of Semiconductors2021，42，1： | 2 |
| 8 | Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array显示文摘The impact of the variations of threshold voltage(Vth) and hold voltage(Vhold) of threshold switching(TS) selector in1 S1 R crossbar array is investigated. Based on ON/OFF state I–V curves measurements from a large number of Ag-filament TS selectors, Vthand Vholdare extracted and their variations distribution expressions are obtained, which are then employed to evaluate the impact on read process and write process in 32×32 1 S1 R crossbar array under different bias schemes. The results indicate that Vthand Vholdvariations of TS selector can lead to degradation of 1 S1 R array performance parameters,such as minimum read/write voltage, bit error rate(BER), and power consumption. For the read process, a small Vhold variation not only results in the minimum read voltage increasing but it also leads to serious degradation of BER. As the standard deviation of Vholdand Vthincreases, the BER and the power consumption of 1 S1 R crossbar array under 1/2 bias,1/3 bias, and floating scheme degrade, and the case under 1/2 bias tends to be more serious compared with other two schemes. For the write process, the minimum write voltage also increases with the variation of Vholdfrom small to large value. A slight increase of Vthstandard deviation not only decreases write power efficiency markedly but also increases write power consumption. These results have reference significance to understand the voltage variation impacts and design of selector properly. | 李雨佳 吴华强 高滨 化麒麟 张昭 张万荣 钱鹤 | 2018 | Chinese Physics B2018，27，11： | 2 |
| 9 | A long lifetime,low error rate RRAM design with self-repair module显示文摘Resistive random access memory(RRAM) is one of the promising candidates for future universal memory.However,it suffers from serious error rate and endurance problems.Therefore,exploring a technical solution is greatly demanded to enhance endurance and reduce error rate.In this paper,we propose a reliable RRAM architecture that includes two reliability modules:error correction code(ECC) and serf-repair modules.The ECC module is used to detect errors and decrease error rate.The serf-repair module,which is proposed for the first time for RRAM,can get the information of error bits and repair wear-out cells by a repair voltage.Simulation results show that the proposed architecture can achieve lowest error rate and longest lifetime compared to previous reliable designs. | 尤志强 胡飞 黄黎明 刘鹏 邝继顺 李实英 | 2016 | Journal of Semiconductors2016，37，11： | 1 |
| 10 | CC-BIOS中显示器控制模块的剖析显示文摘一、总述CC—BIOS中的显示器控制模块(亦称CRT控制模块)是对ROM—BIOS中的显示器控制模块作了较大的扩充后形成的,主要是扩充了显示汉字的功能。由于在显示汉字时,显示器必须工作在图形方式下,而ROM-BIOS的显示器控制模块基本上是在字符方式下工作的。 | 钱培德 | 1985 | 网络新媒体技术1985，0，6： | 1 |
| 11 | Array-level boosting method with spatial extended allocation to improve the accuracy of memristor based computing-in-memory chips显示文摘Memristor based computing-in-memory chips have shown the potentials to accelerate deep neural networks with high energy efficiency. Due to the inherent filament-based conductive mechanism of the memristor, the reading and writing noises are hard to eliminate. Besides, the precision of the large-scale memristor array is still limited. However, when the noise of the memristor is large, the existing training methods to reduce the accuracy loss of memristor based computing-in-memory chips will face challenges.Hence, we proposed the array-level boosting method with spatial extended allocation to reduce the accuracy loss induced by the limited precision and large noises. To optimize the spatial allocation number of each layer in the neural network, the greedy spatial extended allocation algorithm is also proposed. The image processing and classification tasks are demonstrated based on fabricated 32×128 memristor arrays to valid the performance of the proposed method. The chip-in-loop results show that the recovered accuracy of ResNet-34 on CIFAR-10 with array-level boosting method is 92.3%, which is closed to software-based accuracy of 93.2%. | Wenqiang ZHANG Bin GAO Peng YAO Jianshi TANG He QIAN Huaqiang WU | 2021 | Science China(Information Sciences)2021，64，6： | 1 |
| 12 | Circuit design of RRAM-based neuromorphic hardware systems for classification and modified Hebbian learning显示文摘This paper proposes a solution to the learning of neuromorphic hardware systems based on metal-oxide resistive random access memory(RRAM) arrays, which are used as binary electronic synapses.A modified Hebbian learning method is developed to update the binary synaptic weights, and mixed-signal circuits are designed to implement the proposed learning method. The circuits are verified by SPICE, and systematic simulations are also conducted to verify the capability of the neuromorphic system to process relatively large databases. The results show that the system presents high processing speed(106 examples per second) for both classification and learning, and a high recognition accuracy(up to 95.6%) on the MNIST database. | Yuning JIANG Peng HUANG Zheng ZHOU Jinfeng KANG | 2019 | Science China(Information Sciences)2019，62，6： | 1 |
| 13 | GaN衬底上Hf_(0.5)Zr_(0.5)O_2薄膜的阻变性能与机理研究显示文摘采用脉冲激光沉积法在n-Ga N衬底上制备了铁电Hf_(0.5)Zr_(0.5)O_2薄膜,通过测量样品的P-E曲线与I-V特性曲线研究该异质结构的铁电特性及阻变特性。测试结果表明HZO薄膜具有良好的铁电极化特性及双极性电阻开关特性,HZO薄膜的阻值开关比达10~4。薄膜同时还表现出良好的抗疲劳特性和保持特性,80次翻转后窗口保持同一个数量级,在10~5s内器件仍保持稳定。对薄膜的I-V曲线进行拟合分析,表明该薄膜的导电机理为界面肖特基发射模型。 | 陈晓倩 朱俊 吴智鹏 | 2018 | 电子元件与材料2018，37，9： | 1 |
| 14 | 一种基于RRAM热串扰的奇偶重排编码算法显示文摘阻变存储器(resistive random access memory,RRAM)作为未来一种高性能的非挥发性存储器,具有面积小、操作电压低、兼容性好等特点.但是,在高集成存储器和频繁的写操作下,热串扰问题会严重影响RRAM的保持特性.严重情况下,热串扰问题甚至会造成一系列的错误翻转.因此,本文引入了一种高效的奇偶重排编码算法(parity rearrangement coding scheme,PRCoder)来有效缓解热串扰对RRAM的影响,并在算法层和电路层上分别进行设计与仿真.试验结果表明,PRCoder算法平均降低了32.7%的误翻转率,并同时只会在每一个存储行带来1bit的额外开销.此外,PRCoder仅仅带来0.3%的性能增加和0.008%的面积增加. | 李云 张锋 | 2018 | 微电子学与计算机2018，35，4： | 1 |
| 15 | Lead-free perovskite MASnBr3-based memristor for quaternary information storage显示文摘Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power,allowing for low-power computation and multilevel information storage.Many organic-inorganic lead perovskites are reported to demonstrate memristive behavior,but few have been considered for use as a multilevel memory;also,their potential application has been hindered by the toxicity of lead ions.In this article,lead-free perovskite MASnBr3 was utilized in memristors for quaternary information storage.Indium tin oxide(ITO)/MASnBr3/Au memristors were fabricated and showed reliable memristive switching with well-separated ON/OFF states of a maxima resistance ratio of 102 to 103.More importantly,four resistive states can be distinguished and repeatedly written/read/erased with a retention time of 104 seconds and an endurance of 104 pulses.By investigating the current-electrode area relationship,Br distribution in the ON/OFF states by in situ Raman and scanning electron microscopy,and temperaturedependent current decay,the memristive behavior was explicitly attributed to the forming/breaking of conductive filaments caused by the migration of Br−under an electric field.In addition,poly(ethylene terephthalate)-ITO/MASnBr3/Au devices were found to retain their multiresistance state behavior after being bent for 1000 times,thus demonstrating good device flexibility.Our results will inspire more lead-free perovskite work for multilevel information storage,as well as other memristor-based electronics. | Wen-Hu Qian Xue-Feng Cheng Jin Zhou Jing-Hui He Hua Li Qing-Feng Xu Na-Jun Li Dong-Yun Chen Zhi-Gang Yao Jian-Mei Lu | 2020 | InfoMat2020，2，4： | 1 |
| 16 | Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing显示文摘Crossbar architecture has been considered as an efficient means to execute a matrix-vector multiplication computation. An efficient evaluation model for this computation including the interconnect resistance effect on the high density resistive random access memmory(RRAM) crossbar array is proposed in this paper. The proposed model considers the interconnect resistance impacts on the columns and rows separately. The simulation results indicate that the computing speed of the proposed model can be boosted by over three orders of magnitude with the computation deviation of 7.7% in comparison with the precise comprehensive model in the 64 kb crossbar array fabricated at the 14 nm technology node. Based on the proposed evaluation model, the impacts of the parameters including nonlinearity and load resistance, on the computation are discussed along with solutions to improve the computational performance. | Runze HAN Peng HUANG Yudi ZHAO Xiaole CUI Xiaoyan LIU Jinfeng KANG | 2019 | Science China(Information Sciences)2019，62，2： | 1 |
| 17 | 缺陷对RRAM材料阻变机理的影响显示文摘基于密度泛函理论(DFT)的第一性原理和VASP仿真软件,分析了阻变随机存储器(RRAM)阻变效应的物理机制。对比计算了单斜晶相HfO2中Ag掺杂体系、氧空位缺陷体系和Ag及氧空位缺陷共掺杂复合缺陷体系的能带、态密度、分波电荷态密度面和形成能,结果表明在相同浓度下Ag掺杂体系能形成导电通道,而氧空位缺陷体系不能形成导电通道;共掺杂体系中其阻变机制以Ag传导为主,氧空位缺陷为辅,且其形成能变小,体系更加稳定。计算共掺杂体系的布居数和迁移势垒,得出在氧空位缺陷存在的前提下,Ag—O键长明显增加,Ag离子的迁移势垒变小,电化学性能增强。进一步计算了缺陷间的相互作用能,其值为负,表明缺陷间具有相互缔合作用,体系更加稳定。 | 杨金 代月花 徐太龙 蒋先伟 许会芳 卢金龙 罗京 陈军宁 | 2013 | 功能材料2013，44，17： | 1 |
| 18 | Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles显示文摘Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles(TaN-NPs)and sandwiched between Al-doped HfO;layers to achieve ITO/HfAlO/TaN-NP/HfAlO/ITO RRAM device.Transmission electron microscopy along with energy dispersive spectroscopy confirms the presence of TaN-NPs.X-ray photoelectron spectroscopy suggests that part of Ta N converted to tantalum oxynitride(TaO_(x)N_(y))which plays an important role in stable cycle-to-cycle resistive switching.Charge trapping and oxygen vacancy creation were found to be modified after the inclusion of Ta N-NPs inside RRAM structure.Also,HfAlO/TaO_(x)N_(y)interface due to the presence TaN-NPs improves the device-to-device switching reliability by reducing the probability of random rupture/formation of conductive filaments(CFs).DC endurance of more than 10^(3)cycles and memory data retention up to 10^(4)s was achieved with an insignificant variation of different resistance states.Multilevel conductance was attained by controlling RESET voltage with stable data retention in multiple states.The volatile threshold switching was monitored after controlling the CF forming at 200 nA current compliance with high selectivity of~10^(3).Synaptic learning behavior has been demonstrated by spike-rate-dependent plasticity(SRDP).Reliable potentiation and depression processes were observed after the application of suitable negative and positive pulses which shows the capability of the TaN–NPs based RRAM device for transparent synaptic devices. | Chandreswar Mahata Hassan Algadi Muhammad Ismail Daewoong Kwon Sungjun Kim | 2021 | Journal of Materials Science & Technology2021，，36： | 0 |
| 19 | RRAM领军者Crossbar正式进军中国存储市场显示文摘存储器无处不在,电子产品创新的未来取决于存储器的创新,传统的闪存技术已经力不从心,阻变式存储器(RRAM)技术应运而生,被广泛公认是取代其的有力竞争者。作为RIAM技术的领导者,Crossbar公司日前宣布正式进军中国市场,并在上海设立新的办事处。 | 王颖 | 2016 | 中国电子商情2016，，4： | 0 |
| 20 | (001)取向TiO_2薄膜水热生长机理及其忆阻性能显示文摘通过氟基水热法合成出(001)取向的锐钛矿TiO2薄膜,讨论了薄膜的生长机理和忆阻性能。水热生长结果表明,预沉积无定形种子层增加了薄膜致密度,氟离子选择吸附促使TiO2薄膜的取向生长。薄膜的忆阻特性检测表明,(001)取向的TiO2薄膜忆阻单元具有良好的开关特性,稳定性良好。氟基水热法制备TiO2薄膜,设备和工艺简单,成本低,在忆阻器领域会有很好的应用潜力。 | 陈宝龙 武卫兵 陈晓东 张楠楠 | 2014 | 山东化工2014，43，2： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员