A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

查看全文 作　　者：Xin [1]Yang;Chen [1]Luo;Xiyue [1]Tian;Fang [1]Liang;Yin [1]Xia;Xinqian [1]Chen;Chaolun [1]Wang;Steve Xin [2]Liang;Xing [1]Wu;Junhao [1]Chu

机构地区：[1]Shanghai Key Laboratory of Multidimensional Information Processing,East China Normal University,Shanghai 200241,China;[2]Changjiang Electronics Integrated Circuit(Shaoxing)Co.,Ltd,Shaoxing 312000,China

出　　处：《Journal of Semiconductors》索引2021年第42卷第1期,共15页

基　　金：the Projects of Science and Technology Commission of Shanghai Municipality(19ZR1473800 and 14DZ2260800);the Shanghai Rising-Star Program(17QA1401400);Young Elite Scientists Sponsorship Program by CAST(YESS);the Fundamental Research Funds for the Central Universities. 摘　　要：Non-volatile memory(NVM)devices with non-volatility and low power consumption properties are important in the data storage field.The switching mechanism and packaging reliability issues in NVMs are of great research interest.The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle.Transmission electron microscopy(TEM)with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology,structures and chemical compositions at atomic scale.The various external stimuli,such as thermal,electrical,mechanical,optical and magnetic fields,provide a platform to probe and engineer NVM devices inside TEM in real-time.Such advanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolution.This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability issues in the memory package.In this review,the evolution of the functional layers in NVM devices characterized by the advanced in situ TEM technology is introduced,with intermetallic compounds forming and degradation process investigated.The principles and challenges of TEM technology on NVM device study are also discussed. 关键词：MEMORY transmission electron microscopy in situ characterization PACKAGE RELIABILITY

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A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

参考文献(180)

引证文献(4)

耦合文献(54)

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