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High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

查看全文 作　　者：Kena [1]Zhang;Jianjun [2]Wang;Yuhui [3]Huang;Long-Qing [2]Chen;[4]P.Ganesh;Ye [1]Cao 高影响力作者 机构地区：[1]Department of Materials Science and Engineering,University of Texas at Arlington,Arlington,TX 76019,USA;[2]Department of Materials Science and Engineering,The Pennsylvania State University,University Park,PA 16802,USA;[3]Laboratory of Dielectric Materials,State Key Laboratory of Silicon Materials,Cyrus Tang Center for Sensor Materials and Applications,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;[4]Center for Nanophase Materials Sciences,Oak Ridge National Laboratory,Oak Ridge,TN 37831,USA高影响力机构 出　　处：《npj Computational Materials》索引2020年第1期,共10页高影响力期刊 基　　金：P.G.was supported by the Center for Nanophase Materials Sciences,which is a DOE Office of Science User Facility.J.-J.W.acknowledges the partial support from the Army Research Office under grant number W911NF-17-1-0462;L.Q.Chen acknowledges partial support from the Computational Materials Sciences Program funded by the US Department of Energy,Office of Science,Basic Energy Sciences,under Award Number DE-SC0020145;J.-J.W.and L.-Q.C.also acknowledges the partial support from the Donald W.Hamer Foundation through the Hamer Professorship at Penn State.Y.H.H.acknowledges support from National Natural Science Foundation of China under grant number 51802280;This manuscript has been authored by UT-Battelle,LLC under Contract No.DE-AC05-00OR22725 with the U.S.Department of Energy. 摘　　要：Metal oxide-based Resistive Random-Access Memory(RRAM)exhibits multiple resistance states,arising from the activation/deactivation of a conductive filament(CF)inside a switching layer.Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM.Here a phase-field model is developed,based on materials properties determined by ab initio calculations,to investigate the role of electrical bias,heat transport and defect-induced Vegard strain in the resistive switching behavior. 关 键 词：BEHAVIOR LAYER PHASE
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