Controllable n-type doping in WSe_(2)monolayer via construction of anion vacancies

查看全文 作　　者：Mengchen [1]Wang;Wenhui [1]Wang;Yong [1]Zhang;Xing [1]Liu;Lei [1]Gao;Xiaoxue [1]Jing;Zhenliang [1]Hu;Junpeng [1]Lu;Zhenhua [1]Ni 机构地区：[1]School of Physics and Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 211189,China 出　　处：《Chinese Chemical Letters》索引2021年第32卷第10期,共5页 基　　金：supported by the KRDPC(No.2019YFA0308000);National Natural Science Foundation of China(Nos.61927808and 91963130)。 摘　　要：The successful applications of two-dimensional(2 D)transition metal dichalcogenides highly rely on rational regulation of their electronic properties.The nondestructive and controllable doping strategy is of great importance to implement 2 D materials in electronic devices.Herein,we propose a straightforward and effective method to realize controllable n-type doping in WSe_(2)monolayer by electron beam irradiation.Electrical measurements and photoluminescence(PL)spectra verify the strong n-doping in electron beam-treated WSe_(2)monolayers.The n-type doping arises from the generation of Se vacancies and the doping degree is precisely controlled by irradiation fluences.Due to the n-dopinginduced narrowing of the Schottky barrier,the current of back-gated monolayer WSe_(2)is enhanced by an order of magnitude and a$8?increase in the electron filed-effect mobility is observed.Remarkably,it is a moderate method without significant reduction in electrical performance and severe damage to lattice structures even under ultra-high doses of irradiation. 关 键 词：WSe_(2) Electron beam irradiation VACANCY DOPING Schottky barrier