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	题名	作者	年代	出处	被引量
1	Optimum design of triodelikeJEET' s by two-dimensional computer simulation 显示文摘	YAMAGUCHI K KODERA H	1977	IEEE Trans on ED1977，24，8：	1
2	On the calculation of doping profile from C(V) measurement on two-sided junctions 显示文摘	MAN H J J D	1970	IEEE Trans on ED1970，17，12：	1
3	An analysis of small-signal gate-drain resistance effect on RF power MOSFETs 显示文摘	LIN Y S LU S S	2003	IEEE Trans on ED2003，50，2：	1
4	Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminals 显示文摘	MAEZAWA K AKEYOSHI T MIZUTANI T	1994	IEEE Trans on ED1994，41，2：	1
5	High efficiency and high linearity InGaP/GaAs HBT power amplifiers: matching techniques of source and load impedance to improve phase distortion and linearity 显示文摘	IWAI T OHARA S YAMADA H S	1998	IEEE Trans on ED1998，45，6：	1
6	Uhrathin Al2O3 and HfO2 gate dielectrics on surfaee-nitrided Ge 显示文摘	CHEN J J BOJARCZUK N A SHANG H	2004	IEEE Trans on ED2004，51，9：	1
7	A physics-based MOSFET noise model for circuit simulators 显示文摘	HUNG K K KO P K HU C	1990	IEEE Trans on ED1990，37，5：	1
8	Thermochemical reaction of ZrOx (Ny) interfaces on Ge and Si substrate 显示文摘	CHENG C C CHIEN C H LIN J H	2006	IEEE Trans on ED2006，89，01：	1
9	An Evaluation of Heat Dissipation Capability of Slow-Wave Structures显示文摘	Han Yong Liu Yanwen Ding Yaogen	2007	IEEE Trans on ED2007，54，：	1
10	Dynamic thresholdvoltage MOSFET ( DTMOS ) for ultra-low voltage VLSI 显示文摘	ASSADERAGHI F HU C M KO P K	1997	IEEE Trans on ED1997，44，3：	1
11	High-voltage and hightemperature applications of DTMOS with reverse schottky barrier on substrate contacts 显示文摘	CHAO T S LEE Y J HUANG T Y	2004	IEEE Trans on ED2004，51，3：	1
12	Electrical and physical characteristics of thin nitrided oxides prepared by rapid thermal nitridation 显示文摘	HORI T IWASAKI H NAITO Y	1987	IEEE Trans on ED1987，34，11：	1
13	Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects 显示文摘	APANOVICH Y BLAKEY P COTTLE R	1995	IEEE Trans on ED1995，42，5：	1
14	Comparison of performance and reliability between MOSFETs with LPCVD gate oxide and thermal gate oxide 显示文摘	AHN J TING W KWONG D L	1991	IEEE Trans on ED1991，38，12：	1
15	A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs 显示文摘	SANDEN M MARINOV O DEEN M J	2002	IEEE Trans on ED2002，49，3：	1
16	On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs 显示文摘	SHI Y NIU G CRESSLER J D	2003	IEEE Trans on ED2003，50，5：	1
17	Thremal, electrical and environmental reliability of lnP HEMTs and GaAs PHEMTs 显示文摘	DEL ALAMO J A VILLANUEVA A A	2004	IEEE Trans on ED2004，35，3：	1
18	Analytic model of I-V characteristics of 4H-SiC MESFETs based on mulfiparameter mobility model 显示文摘	LV H L ZHANG Y M ZHANG Y M	2004	IEEE Trans on ED2004，51，7：	1
19	A nonfundamental theory of low-frequency noise in semiconductor devices 显示文摘	MOHAMMADI S PAVLIDIS D	2000	IEEE Trans on ED2000，47，11：	1
20	Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications显示文摘	SAITO W TAKADA Y KURAGUCHI M	2006	IEEE Trans on ED2006，53，2：	1

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