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| 1 | 快重离子辐照氧化镓的非晶潜径迹研究显示文摘Gallium oxide(Ga_(2)O_(3)),an ultra-wide bandgap semiconductor material,is attracting great interest for power devices,solar cells and ultraviolet detectors.The study of radiation damage effects is of importance for the application of Ga_(2)O_(3) in harsh environment.In this work,it is the first time to observe the amorphous latent track of Ga2O3 single crystal by TEM.TEM images display that the mean diameters of amorphous latent tracks are 7.4,7.5 and 8.7 nm in Ga_(2)O_(3) lamella samples irradiated by Ta ions with energy of 1786,1388 and 829 MeV,respectively.The latent track size meaured by TEM in this work is consisent with that measured by XRD in previous study[1]. | Ai Wensi Xu Lijun Nan Shuai Zhai Pengfei Li Zongzhen Hu Peipei Zeng Jian Zhang Shengxia Liu li Sun Youmei Liu Jie | 2018 | IMP & HIRFL Annual Report2018，，1： | 0 |
| 2 | Vibrational Modes in La_(2)Zr_(2)O_(7) Pyrochlore Irradiated with Disparate Electrical Energy Losses显示文摘Polycrystalline samples of La_(2)Zr_(2)O_(7) pyrochlore were irradiated by different energetic heavy ions to investigate the dependence of the vibrational mode variations on the irradiation parameters. | Zhang Shengxia Liu Jie Zeng Jian Hu Peipei Xu Lijun Li Zongzheng Liu Li Zhai Pengfei Ai Wensi Sun Youmei | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
| 3 | Latent Tracks in Two TiO_(2) Polymorphs Induced by Swift Heavy Ions显示文摘More recently,we reported on the first observation of fine structure of latent tracks in rutile TiO_(2),which changes from cylinder to dumbell-shape and then to sandglass shape as a function of the ion path length(Fig.1(a))[1]. | Zhai Pengfei Xu Lijun Nan Shuai Li Weixing Li Zongzhen Ai Wensi Hu Peipei Zeng Jian Zhang Shengxia Liu Li Liu Jie | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
| 4 | Radiation Effect on Commercial YBCO Coated Conductors显示文摘SHI irradiation method may be another method except in-situ growth techniques to generate one-dimensional defects in YBCO(YBa_(2)Cu_(3)O_(7)-x)films and has already been studied since 1990[1]. | Liu Li Liu Jie Zhai Pengfei Zhang Shengxia Zeng Jian Hu Peipei Xu Lijun Li Zongzhen Ai Wensi | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
| 5 | Response of SiC Schottky Barrier Diode to Swift Heavy Ion Irradiation显示文摘Due to the lager bandgap,higher breakdown electric field,higher thermal conductivity and lager saturated electron drift velocity of silicon carbide(SiC),the SiC power devices have many advantages like high-voltage operation. | Yan Xiaoyu Liu Jie Liu Tianqi Hu Peipei Zhao Peixiong Ai Wensi Sun Youmei | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
| 6 | Investigation of Heavy Ion Irradiation Effects on Microstructural and Optical Properties of Amorphous HfO_(2) Thin Films显示文摘Amorphous HfO_(2) is widely utilized as high-k gate dielectric materials for reducing the tunneling leakage current and improving the reliability to overcome the physical limitation of traditional gate dielectric like SiO_(2)[1,2]. | Li Zongzhen Liu Jie Zhai Pengfei Zeng Jian Zhang Shengxia Hu Peipei Xu Lijun Ai Wensi Liu Li | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
| 7 | Luminescence Characteristics of β-Ga_(2)O_(3) Irradiated by Swift Heavy Ions显示文摘β-Ga_(2)O_(3) has received extensive attention as power electronics and UV optoelectronics because of its ultra-wide band gap, excellent chemical and thermal stability. In this work。 | Ai Wensi Liu Jie Zhai Pengfei Hu Pupu Xu Lijun Li Zongzhen Liu Li Zeng Jian Zhang Shengxia | 2019 | IMP & HIRFL Annual Report2019，，1： | 0 |
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