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25篇 您的检索式：作者名="Allerman A"

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	题名	作者	年代	出处	被引量
1	Room-temperature direct current operation of 290nm light-emitting diodes with milliwatt power levels显示文摘	Fischer A J Allerman A A Crawford M H	2004	Appl Phys Lett2004，84，17：	1
2	Growth and design of deep-UV(240-290 nm)light emitting diodes using AlGaN alloys 显示文摘	ALLERMAN A A CRAWFORD M H FISCHER A J	2004	J Cryst Growth2004，272，1234：	1
3	Room-temperature direct current operation of 290nm light -emitting diodes with milliwatt power levels显示文摘	Fischer A J Allerman A A	2004	Appl Phys Lett2004，84，17：	1
4	In situ measurements of GaN nucleation layer decompostion显示文摘	Koleske D D Coltrin M E Allerman A A	2003	Appl Phys Lett2003，82，8：	1
5	Minority Carrier Diffusion, Defects, and Localization in InGaAsN, with 2% Nitrogen 显示文摘	Kurtz S R Allerman A A Seager C H	2000	Applied Physics Letters2000，77，：	1
6	Growth and design of deep-UV (240~290 nm) light emitting diodes using AlGaN alloys显示文摘	Crawford M H Fischer A J	2004	Journal of Crystal Growth2004，272，：	1
7	Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy显示文摘	KURTZ S R KLEM J F ALLERMAN A A	2002	Applied Physics Letters2002，80，8：	1
8	Selective diamond seed deposition using electroplated copper 显示文摘	RAMESHAM R ROSE F M ALLERMAN A	1992	Diamond and Related Materials1992，1，：	1
9	Growth and design of deep-UV(240-290 nm) light emitting diodes using AlGaN alloys显示文摘	ALLERMAN A A CRAWFORD M H FISCHER A J	2004	J Cryst Growth2004，272，14：	1
10	Room - temper- ature direct current operation of 290 nm light- emitting diodes with milliwatt power levels 显示文摘	Fischer A Allerman A Crawford M	2004	Applied Physics Letters2004，84，17：	1
11	High power and good beam quality at 980nm from a vertical external-cavity surfaceemitting laser 显示文摘	ALFORD W J RAYMOND T D ALLERMAN A A	2002	J O S A2002，19，4：	1
12	Strain relaxation in AIGaN muhilayer structures by inclined dislocations显示文摘	D M Follstaedt S R Lee A A Allerman	2009	J Appl Phys2009，105，083507：	1
13	High power and good beam quality at 980nm from a vertical external-cavity surfaceemitting laser显示文摘	Alford W J Raymond T D Allerman A A		0，，：	1
14	Growth and design of deep-UV (240-290) light emitting diodes using AlGaN alloys显示文摘	Allerman A A Crawford M H Fischer A J	2004	J Crystal Growth2004，272，：	1
15	Improved Brightness of 380 nm Ga N Light Emitting Diodes through Intentional Delay of the Nucleation Island Coalescence显示文摘	Koleske D D Fischer A J Allerman A A	2002	Applied Physics Letters2002，81，11：	1
16	Device Per- formance of A1GaN-based 240-300nm deep UV LEDs显示文摘	A J Fischer A A Allerman M H Grawford	2004	Proe SPIE2004，5530，：	1
17	Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels显示文摘	FISCHER A J ALLERMAN A A CRAWFORD M H	2004	Applied Physics Letters2004，84，17：	1
18	High power and good beam quality at 980 nm from a vertical external-cavity surface emitting la- ser显示文摘	Alford W J Raymond T D Allerman A A	2002	Journal of Optical Society of America B2002，19，66：	1
19	High power and good beam quality at 980 nm from a vertical external cavitysurface emitting laser 显示文摘	Alford W J Raymond T D Allerman A A	2002	J Opt Soe Am B2002，19，4：	1
20	Minority carrier diffu- sion and defects in InGaAsN grown by molecular beam epitaxy显示文摘	Kurtz S R Klem J F Allerman A A	2002	Appl Phys Lett2002，80，8：	1

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