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2篇 您的检索式:作者名="B.Jain"
    题名 作者 年代 出处 被引量
1热带森林土壤-火关系研究中的土壤火烧严重度指数显示文摘随着火的频率日益增加、人口及对森林的需求增高,需要有一些方法,来对热带森林中火的影响进行评估。火对土壤的短期和长期影响取决于火前、火中和火后的环境。我们把这些成分放在一个火干扰连续体中,来进行我们的文献分析,并提出了一个综合性的土壤火烧严重度指数。这个土壤火烧严重度指数包含一整套指标,反映了过火之后的存在状态。指数有7个等级,1个未火烧等级和6个描述火后土壤状态的等级。我们认为该指数可用于研究火对森林地表的影响,并且认为随着新信息的获得,该指数可能(像我们预测的那样)会有所修改。Theresa B.Jain William A.Gould Russell T.Graham David S.Pilliod Leigh B.Lentile Grizelle González 王胜 2008AMBIO-人类环境杂志2008,37,7:0
2Investigation of current collapse and recovery time due to deep level defect traps inβ-Ga2O3 HEMT显示文摘In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.R.Singh T.R.Lenka R.T.Velpula B.Jain H.Q.T.Bui H.P.T.Nguyen 2020Journal of Semiconductors2020,41,10:0
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