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5篇 您的检索式：作者名="CAINA LUAN"

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		题名	作者	年代	出处	被引量
	1	Characterization of homoepitaxial β-Ga 2 O 3 films prepared by metal–organic chemical vapor deposition显示文摘	Xuejian Du Wei Mi Caina Luan Zhao Li Changtai Xia Jin Ma	2014	Journal of Crystal Growth2014，，：	2
	2	Epitaxial relation- ships and optical properties of SnO2 films deposited on sap- phire substrates显示文摘	Zhu Zhen Ma Jin Luan Caina	2011	Appl Surf Sci2011，257，7：	1
	3	Epitaxial relationships and optical properties of SnOz films deposited on sap- phire substrates显示文摘	Zhu Zhen Ma Jin Luan Caina	2011	Appl Surf Sci2011，257，20：	1
	4	Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al 2 O 3 (0<ce:hsp sp='0.25'/>0<ce:hsp sp='0.25'/>0<ce:hsp sp='0.25'/>1) by MOCVD显示文摘	Fan Yang Jin Ma Caina Luan Lingyi Kong	2009	Applied Surface Science2009，，11：	1
	5	Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors显示文摘Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter.	DEZHONG CAO XIAOKUN YANG LUYANG SHEN CHONGCHONG ZHAO CAINA LUAN JIN MA HONGDI XIAO	2018	Photonics Research2018，6，12：	0

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