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| 1 | Modeling and understanding of the frequency dependent HPM upset susceptibility of the CMOS inverter显示文摘In this paper, we interpret and, for the first time, model a frequency dependent high-power microwave(HPM) upset susceptibility. We constructed the analytical models of the total amount of injected charges N inj, the excess carrier density distribution in P-Substrate, and the frequency dependent HPM upset susceptibility level. The models are validated by simulated results and experimental data, respectively. Results reveal that N inj is proportional to fαwhile the exponent α should be adjusted to-0.525. The excess carrier density distribution behaves the frequency dependence as well; the dependence is attributable to the fact that the AC field within the CMOS inverter varies too rapidly for the carriers to follow at high frequency. Meanwhile,the HPM upset susceptibility level is a decreasing function of f. The f dependent HPM upset susceptibility model is verified to be reliable and able to quickly estimate the susceptibility level of CMOS inverter considering IC technology, layout parameters, pulse properties, and operating environment simultaneously. Besides, the empirical formula P = A · fαis proposed to provide instant estimation to the HPM upset power threshold. In conclusion, by aid of the analytical model, we acquired the influence of the layout parameter LB on the HPM susceptibility and demonstrated that the CMOS inverter with minor LB is more susceptible to HPM. | YU XinHai CHAI ChangChun LIU Yang YANG YinTang | 2015 | Science China(Information Sciences)2015，58，8： | 4 |
| 2 | A high performance adaptive on-time controlled valley-current-mode DC–DC buck converter显示文摘This paper presents an AOT-controlled(adaptive-on-time,AOT)valley-current-mode buck converter for portable application.The buck converter with synchronous rectifier not only uses valley-current-mode control but also possesses hybridmode control functions at the same time.Due to the presence of the zero-current detection circuit,the converter can switch freely between the two operating modes without the need for an external mode selection circuit,which further reduces the design difficulty and chip area.The converter for the application of high power efficiency and wide current range is used to generate the voltage of 0.6–3.0 V with a battery source of 3.3–5.0 V,while the load current range is 0.05–2 A.The circuit can work in continuous conduction mode with constant frequency in high load current range.In addition,a stable output voltage can be obtained with small voltage ripple.In pace with the load current decreases to a critical value,the converter transforms into the discontinuous conduction mode smoothly.As the switching period increases,the switching loss decreases,which can significantly improve the conversion efficiency.The proposed AOT controlled valley current mode buck converter is integrated with standard 0.18μm process and the simulation results show that the converter provides well-loaded regulations with power efficiency over 95%.When the circuit switches between the two conduction modes drastically,the response time can be controlled within 30μs.The undershoot voltage is controlled within 25 mV under a large current hopping range. | Chanrong Jiang Changchun Chai Chenxi Han Yintang Yang | 2020 | Journal of Semiconductors2020，41，6： | 3 |
| 3 | Strain effects on valence bands of wurtzite ZnO显示文摘Based on the k.p theory of Luttinger-Kohn and Bir-Pikus,analytical E-k solutions for the valence band of strained wurtzite ZnO materials are obtained.Strain effects on valence band edges and hole effective masses in strained wurtzite ZnO materials are also discussed.In comparison with unstrained ZnO materials,apparent movement of valence band edges such as 'light hole band','heavy hole band' and 'crystal splitting band' at Γ point is found in strained wurtzite ZnO materials.Moreover,effective masses of 'light hole band','heavy hole band' and 'crystal splitting band' for strained wurtzite ZnO materials as the function of stress are given.The analytical results can provide a theoretical foundation for the understanding of physics of strained ZnO materials and its applications with the framework for an effective mass theory. | QIAO LiPing CHAI ChangChun JIN Zhao YANG YinTang MA ZhenYang | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，9： | 3 |
| 4 | Negative differential resistance in single-walled SiC nanotubes显示文摘A two-probe system was established for a finite (7, 0) silicon carbide (SiC) nanotube coupled to Au (111) surfaces via Au-C bonds. Using the non-equilibrium Green function (NEGF) combined with density functional theory (DFT), the above system was studied for its electronic transport properties. Negative differential resistance (NDR) was observed when the bias voltage was greater than 1.4 V. Because the transport properties of the system were sensitive to the applied bias voltage, NDR might be caused by the fluctuation of the transmission coefficient with the bias voltage. | YANG YinTang SONG diuXu LIU HongXia CHAI ChangChun | 2008 | Chinese Science Bulletin2008，53，23： | 2 |
| 5 | EMP Injection Damage Effects of a Bipolar Transistor and its Relationship between the Injecting Voltage and Energy显示文摘 | Xi Xiaowen Chai Changchun Ren Xingrong | 2010 | Journal of Semiconductor2010，31，04： | 1 |
| 6 | The Effect of Injection Damage on a Silicon Bipolar Low-noise Amplifier显示文摘 | Chai Changchun Yang Yintang Zhang Bing | 2009 | Semicond Sci Technol2009，24，03： | 1 |
| 7 | A high EMS daisy-chain SPI interface for battery monitor system显示文摘A high EMS current-mode SPI interface for battery monitor IC(BMIC) is presented to form a daisychain bus configuration for the cascaded BMICs and the communication between the MCU and master BMIC.Based on analog and digital mixed filtering technique,the proposed daisy-chain can avoid the isolated communication issue in electromagnetic interference environment,and reduce the extensively required I/O ports of MCU,at the same time reduce the system cost.The proposed daisy-chain interface was introduced in a 6-ch battery monitor IC which was fabricated with 0.35μ m 30 V BCD process.The measurement result shows that the presented daisy-chain SPI interface achieves better EMS performance with different EMI injection while just consuming a total operation current up to 1 m A. | Qidong Zhang Yintang Yang Changchun Chai | 2017 | Journal of Semiconductors2017，38，3： | 1 |
| 8 | First-principles Theoretical Study on Band of Strained Wurtzite Nb-doped ZnO显示文摘The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, the band gap increases gradually with increasing Nb contents in unstrained Nb-doped Zn O, which is consistent with the experimental results. Secondly, the band gap decreases with increasing substrate stress in Nb-doped Zn O/Zn1-xMgxO. Splitting energies between HHB(Heavy Hole Band) and LHB(Light Hole Band), HHB and CSB(Crystal Splitting Band) in Zn0.9167Nb0.0833O/Zn1-xMgxO almost remain unchanged with increasing substrate stress, while decrease slightly in Zn0.875Nb0.125O/Zn1-xMgxO. In addition, detailed analysis of the strain effects on the effective masses of electron and hole in Nb-doped Zn O/Zn1-xMgxO is also given. | 乔丽萍 CHAI Changchun YANG Yintang YU Xinhai SHI Chunlei | 2015 | Journal of Wuhan University of Technology(Materials Science)2015，30，3： | 1 |
| 9 | Hardening measures for bipolar transistors against microwave-induced damage显示文摘 | Chai Changchun Ma Zhenyang Ren Xingrong | 2013 | Chinese Physics B2013，22，68： | 1 |
| 10 | The influence of pulsed parameters on the damage of a Darlington transistor显示文摘Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted,and temperature variation as functions of pulse repetitive frequency(PRF)and duty cycle(DC)are studied.According to the distribution of the electronic field and the current density in the Darlington transistor,the research of the damage mechanism is carried out.The results show that for repetitive pulses with the same pulse widths and different PRFs,the value of temperature variation increases with PRF increases,and the peak temperature has almost no change when PRF is lower than 200 k Hz;while for the repetitive pulses with the same PRF and different pulse widths,the larger the pulse width is,the greater temperature variation varies.The response of the peak temperature caused by a single pulse demonstrates that there is no temperature variation when the rising time is much shorter than the falling time.In addition,the relationship between the temperature variation and the time during the rising edge time as well as that between the temperature variation and the time during the falling edge time are obtained utilizing the curve fitting method.Finally,for a certain average power,with DC increases the value of temperature variation decreases. | Qiankun Wang Changchun Chai Yuqian Liu Yintang Yang | 2018 | Journal of Semiconductors2018，39，9： | 1 |
| 11 | Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave显示文摘High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a wurtzite crystal structure.Based on the piezoelectric constitutive equation,the mechanical and electrical energies were equivalently coupled,and the effective numerical model was built in the simulation software.The results indicated that a part of the electrical energy was stored in the device as a form of elastic energy,causing the burnout time of Ga N HEMT to be extended.The effects of different injection voltages and frequencies were analyzed,and the results revealed that elastic energy plays a different role during the process of device damage.These results are of great significance for the design of Ga N HEMTs with better reliability in harsh electromagnetic environments and for improving their protection design. | WANG Lei CHAI ChangChun ZHAO TianLong LI FuXing QIN YingShuo YANG YinTang | 2023 | Science China(Technological Sciences)2023，66，8： | 0 |
| 12 | The Photovoltage-gas Sensitive Properties of 7,7,8,8-Tetracyanoquinodimethane(TCNQ)显示文摘In this paper, surface photovoltage technique (SPV) was applied to the study of photovoltaic and gas sensitive properties of TCNQ polycrystal. It was found that SPV shows two peaks at 390 nm(P1) and 480 nm (P2) in the ultraviolet-visible range. And they are opposite in phase. The results of gaseous adsorption confirm that P, shows the acceptor characteristics, while PI shows that of donor. During adsorption, donor gas interacts with conjugated II * orbital, acceptor gas with the terminal group C=N . | Jiang Lei, Wang Dejun, Liu Wang, Chai Xiangdong and Li Tiejin (Department of Chemistry, Jilin University, Changchun) | 1990 | Chemical Research in Chinese Universities1990，6，4： | 0 |
| 13 | X-Ray Photoelectron Spectroscopic Study on the Synthesis of Copper Sulphide in LB Films( Ⅱ )显示文摘The present paper covers the formation process of copper sulphide in copper stearate Langmuir-Blodgett films studied carefully by XPS. The further identification of sulfur species and the examination of its change in the reaction have been made. Also the formation mechanism of sulfur species in the special microenvironment-LB films is discussed. | CHEN Hui-juan, CHAI Xiang-dong, WEI Quan , JIANG Yue-shun and LI Tie-jin (Department of Chemistry, Jilin University, Changchun, 130023) | 1992 | Chemical Research in Chinese Universities1992，8，4： | 0 |
| 14 | High-power microwaves response characteristics of silicon and GaAs solar cells显示文摘The high-power microwave(HPM)effect heats solar cells,which is an important component of a satellite.This creates a serious reliability problem and affects the normal operation of a satellite.In this paper,the different HPM response characteristics of two kinds of solar cells are comparatively researched by simulation.The results show that there are similarities and differences in hot spot distribution and damage mechanisms between both kinds of solar cell,which are related to the amplitude of HPM.In addition,the duty cycle of repetition frequency contributes more to the temperature accumulation of the solar cells than the carrier frequency.These results will help future research of damage assessment technology,reliability enhancement and the selection of materials for solar cells. | Xiangrui Meng Changchun Chai Fuxing Li Yi Sun Yintang Yang | 2022 | Journal of Semiconductors2022，43，11： | 0 |
| 15 | Studies on the Conformation of Poly (1-naphthol) Assembled by Horseradish Peroxidase in Aqueous Micelle显示文摘StudiesontheConformationofPoly(1┐naphthol)AsembledbyHorseradishPeroxidaseinAqueousMicele*CHENSong-ming**,ZHANGXue-zhong,CHAI... | CHEN Songming**, ZHANG Xuezhong, CHAI Xiangdong and LI Tiejin(Department of Chemistry,the State Key Lab of Enzyme Engineering,Jilin University,Changchun,130023) | 1998 | Chemical Research in Chinese Universities1998，14，2： | 0 |
| 16 | 60 V tolerance full symmetrical switch for battery monitor IC显示文摘For stacked battery monitoring IC high speed and high precision voltage acquisition requirements,this paper introduces a kind of symmetrical type high voltage switch circuit.This kind of switch circuit uses the voltage following structure,which eliminates the leakage path of input signals.At the same time,this circuit adopts a high speed charge pump structure,in any case the input signal voltage is higher than the supply voltage,it can fast and accurately turn on high voltage MOS devices,and convert the battery voltage to an analog to digital converter.The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process;simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. | Qidong Zhang Yintang Yang Changchun Chai | 2017 | Journal of Semiconductors2017，38，6： | 0 |
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