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6篇 您的检索式：作者名="Chunlan Mo"

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		题名	作者	年代	出处	被引量
	1	Efficient InGaN-based yellow-light-emitting diodes显示文摘Realization of efficient yellow-light-emitting diodes(LEDs) has always been a challenge in solid-state lighting.Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A∕cm^2 and 33.7% at 3 A∕cm^2. The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3 D pn junction with V-pits.	FENGYI JIANG JIANLI ZHANG LONGQUAN XU JIE DING GUANGXU WANG XIAOMING WU XIAOLAN WANG CHUNLAN MO ZHIJUE QUAN XING GUO CHANGDA ZHENG SHUAN PAN JUNLIN LIU	2019	Photonics Research2019，7，2：	13
	2	显示文摘	Chunlan Mo Wenqing Fang Yong Pu	2005	Journal of Crystal Growth2005，285，3：	1
	3	Growth and Characterization of In GaN Blue LED Structure on Si(111) by MOCVD显示文摘	Mo Chunlan Fang Wenqing Liu Hechu	2005	Journal of Crystal Growth2005，285，：	1
	4	Growth and characterization of InGaN blue LED structure on Si ( 111 ) by MOCVD 显示文摘	Chunlan Mo Wenqing Fang Hechu Liu	2005	Journal of Crystal Growth2005，285，：	1
	5	Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD 显示文摘	Mo Chunlan Fang Wenqing Liu Hechu	2005	Journal of Crystal Growth2005，285，：	1
	6	Research on the junction-temperature characteristic of GaN light-emitting diodes on Si substrate显示文摘	Fengyi Jiang Weihua Liu Youqun Li Wenqing Fang Chunlan Mo Maoxing Zhou Hechu Liu	2006	Journal of Luminescence2006，，：	1

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