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7篇 您的检索式:作者名="Hechu"
    题名 作者 年代 出处 被引量
1Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate显示文摘InGaN MQW LEDs, grown by metal-organic chemical vapor deposition (MOCVD) on Si(111) substrates, were successfully bonded and transferred onto new Si substrate. After chemical etching Si(111) substrate and inductively coupled plasma (ICP) etching the transferred LED film to Si-doped layer, a vertical structure GaN blue LEDs were then fabricated. The characteristics of the lateral structure LED (grown on Si) and the vertical structure LED (bonded on Si) were investigated. It shows the performance of ver- tical structure LEDs had obviously been improved compared to the lateral structure LEDs and the tensile stress in GaN layer of vertical structure LEDs is smaller than that in lateral structure LEDs.XIONG Chuanbing JIANG Fengyi FANG Wenqing WANG Li LIU Hechu MO Chunnan 2006Science China(Technological Sciences)2006,49,3:12
2Atmospheric Pressure MOCVD Growth of High-quality ZnO Films on GaN/Al2O3 Templates显示文摘Dai Jiangnan Liu Hechu Fang Wenqing 2005Journal of Crystal Growth2005,283,:1
3Growth and Characterization of In GaN Blue LED Structure on Si(111) by MOCVD显示文摘Mo Chunlan Fang Wenqing Liu Hechu 2005Journal of Crystal Growth2005,285,:1
4Growth and characterization of InGaN blue LED structure on Si ( 111 ) by MOCVD 显示文摘Chunlan Mo Wenqing Fang Hechu Liu 2005Journal of Crystal Growth2005,285,:1
5Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD 显示文摘Mo Chunlan Fang Wenqing Liu Hechu 2005Journal of Crystal Growth2005,285,:1
6The characteristics of GaN-based blue LED on Si substrate显示文摘Xiong Chuanbing Jiang Fengyi Fang Wenqing Wang Li Mo Chunna Liu Hechu 2007Journal of Luminescence2007,,:1
7Research on the junction-temperature characteristic of GaN light-emitting diodes on Si substrate显示文摘Fengyi Jiang Weihua Liu Youqun Li Wenqing Fang Chunlan Mo Maoxing Zhou Hechu Liu 2006Journal of Luminescence2006,,:1
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