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您的检索式：作者名="Desui Chen"
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| 1 | High-performance all-solution-processed inverted quantum dot light-emitting diodes enabled by water treatment显示文摘All-solution-processed inverted quantum dot(QD)light-emitting diodes(QLEDs)with transparent bottom cathodes can be directly connected to the n-type thin-film transistors,offering a feasible solution for low-cost active matrix-driven QD displays.However,the subsequent solution-deposition of the hole-transporting layer destroys the underneath QD films,resulting in largely deteriorated device performance.Various strategies have been implemented to prevent QD film from dissolution,but all at a heavy cost of device performance suffering from either reduced efficiency or increased driving voltage.Here,a facile and effective water-treatment approach for QD film to fabricate inverted QLEDs through all solution processing is reported.The water treatment substitutes the long-chain oleate ligands with hydroxyl groups,resulting in significantly improved non-polar solvent resistance of the QD films.Importantly,the QD films reserve their excellent photoluminescence efficiency after water treatment.With the water-treated QD film as the emissive layer,all-solution-processed inverted red QLED with a peak external quantum efficiency of 19.6%,a turn-on voltage of 1.8 V,and a T50 operational lifetime of 150,000 h at 100 cd·m^(-2) was achieved.Furthermore,efficient and low-voltage-driven green and blue QLEDs can also be prepared with this method.This work provides a feasible strategy for the fabrication of high-performance all-solution-processed inverted QLEDs,paving the way toward achieving QLEDs by all ink-jet printing. | Qianqing Hu Junjie Si Desui Chen Xiaoming Hao Rui Xu Yihang Du Zhuopeng Du Xinquan Gong Hong Zhao Peiqing Cai Qi Ai Xin Yao Yu Yan Zenan Zhang Muzhi Cai Wei Liu Yongyin Kang Zugang Liu | 2023 | Nano Research2023，16，7： | 0 |
| 2 | Quantum-dot light-emitting diodes with Fermi-level pinning at the hole-injection/hole-transporting interfaces显示文摘Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)with high work functions are generally used to achieve efficient hole injection.In these devices,Fermi-level pinning,a phenomenon often observed in heterojunctions involving organic semiconductors,can take place in the hole-injection/hole-transporting interfaces.However,an in-depth understanding of the impacts of Fermi-level pinning at the hole-injection/hole-transporting interfaces on the operation and performance of QLEDs is still lacking.Here,we develop a set of NiOx HILs with controlled work functions of 5.2–5.9 eV to investigate QLEDs with Fermi-level pinning at the hole-injection/hole-transporting interfaces.The results show that despite that Fermi-level pinning induces identical apparent hole-injection barriers,the red QLEDs using HILs with higher work functions show improved efficiency roll-off and better operational stability.Remarkably,the devices using the NiOx HILs with a work function of 5.9 eV demonstrate a peak external quantum efficiency of~18.0%and a long T95 operational lifetime of 8,800 h at 1,000 cd·m^(−2),representing the best-performing QLEDs with inorganic HILs.Our work provides a key design principle for future developments of the hole-injection/hole-transporting interfaces of QLEDs. | Maopeng Xu Desui Chen Jian Lin Xiuyuan Lu Yunzhou Deng Siyu He Xitong Zhu Wangxiao Jin Yizheng Jin | 2022 | Nano Research2022，15，8： | 0 |
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