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| 1 | Cultural difference inmotivations for using social network sites : A comparative study of A-merican and Korean college students显示文摘 | YOOJUNG K DONGYOUNG S SEJUNG MC | 2011 | Comp Hum Behav2011，27，1： | 1 |
| 2 | The square root Diffie–Hellman problem显示文摘 | Dongyoung Roh Sang Geun Hahn | 2012 | Designs, Codes and Cryptography2012，，2： | 1 |
| 3 | Building customer relationships in an electronic age : The role of interactivity of e - commerce web sites 显示文摘 | DONGYOUNG S DOYLE Y SEJUNG M C | 2008 | Psychology & Marketing2008，25，7： | 1 |
| 4 | Sliding-Mode tracking control of nonholonomic wheeled mobile robots in polar coordinates显示文摘 | DONGYOUNG C | 2004 | IEEE transactions on control systems technology2004，，： | 1 |
| 5 | Glass composite vibration isolating structure for the LNG cargo containment system显示文摘 | Jaeheon Choe Ki Hyun Kim Dongyoung Lee Chang Seon Bang Dai Gil Lee | 2014 | Composite Structures2014，，： | 1 |
| 6 | Disentangling the Effects of Social Network Density on Electronic Word-of-Mouth (eWOM) Intention显示文摘 | Dongyoung Sohn | 2009 | Journal of Computer-Mediated Communication2009，14，2： | 1 |
| 7 | Removing escrow from ciphertext policy attribute-based encryption显示文摘 | Junbeom Hur Dongyoung Koo Seong Oun Hwang Kyungtae Kang | 2013 | Computers and Mathematics with Applications2013，，9： | 1 |
| 8 | On the bit security of the weak Diffie-Hellman I:roblem 显示文摘 | ROH Dongyoung HAHN Sanggeun | 2010 | Information Processing Letters2010，110，19： | 1 |
| 9 | The square root diffie-hellman problem 显示文摘 | Dongyoung Roh Sang Geun Hahn | 2012 | Designs Codes and Cryptography2012，62，2： | 1 |
| 10 | Residual and sublethal effects of fenpyroximate and pyridaben on the instantaneous rate of increase of Tetranychus urticae显示文摘 | Minsik Kim Cheolho Sim Dongyoung Shin | 2006 | Crop Protection2006，25，： | 1 |
| 11 | Ferro-floating memory:Dual-mode ferroelectric floating memory and its application to in-memory computing显示文摘Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration density,stability,and reliability,which has been verified by commercialized products.However,its high operating voltage and slow operation speed issues caused by the tunneling mechanism make its adoption in in-memory computing applications difficult.In this paper,we introduce a dual-mode memory device named“ferro-floating memory”,fabricated using van der Waals(vdW)materials(h-BN,MoS2,andα-In2Se3).The vdW material,α-In2Se3,acts as a polarization control layer for the ferroelectric memory operation and charge storage layer for the conventional flash memory operation.Compared to the tunnelingbased memory operation,the ferro-floating memory operates 1.9 and 3.3 times faster at 6.7 and 5.8 times lower operating voltages for programming and erasing operations,respectively.The dual-mode operation improves the linearity of conductance change by 5 times and the dynamic range by 48%through achieving conductance variation regions.Furthermore,we assess the effects of the variation in device operating voltage on neural networks and suggest a memory array operating scheme for maximizing the networks'performance through various training/inference simulations. | Sangyong Park Seyong Oh Dongyoung Lee Jin-Hong Park | 2022 | InfoMat2022，4，11： | 0 |
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