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您的检索式：作者名="FENG WanXiang"
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| 1 | Three-dimensional topological insulators:A review on host materials显示文摘In recent years,three-dimensional topological insulators(3DTI) as a novel state of quantum matter have become a hot topic in the fields of condensed matter physics and materials sciences.To fulfill many spectacularly novel quantum phenomena predicted in 3DTI,real host materials are of crucial importance.In this review paper,we first introduce general methods of searching for new 3DTI based on the density-functional theory.Then,we review the recent progress on materials realization of 3DTI including simple elements,binary compounds,ternary compounds,and quaternary compounds.In these potential host materials,some of them have already been confirmed by experiments while the others are not yet.The 3DTI discussed here does not contain the materials with strong electron-electron correlation.Lastly,we give a brief summary and some outlooks in further studies. | FENG WanXiang YAO YuGui | 2012 | Science China(Physics,Mechanics & Astronomy)2012，55，12： | 2 |
| 2 | An Evaluation of Chinese Human-Computer Dialogue Technology显示文摘There is a growing interest in developing human-computer dialogue systems which is an important branch in the field of artificial intelligence(AI).However,the evaluation of large-scale Chinese human-computer dialogues is still a challenging task.To attract more attention to dialogue evaluation work,we held the fourth Evaluation of Chinese Human-Computer Dialogue Technology(ECDT).It consists of few-shot learning in spoken language understanding(SLU)(Task 1)and knowledge-driven multi-turn dialogue competition(Task 2),the data sets of which are provided by Harbin Institute of Technology and Tsinghua University.In this paper,we will introduce the evaluation tasks and data sets in detail.Meanwhile,we will also analyze the evaluation results and the existing problems in the evaluation. | Zixian Feng Caihai Zhu Weinan Zhang Zhigang Chen Wanxiang Che Minlie Huang Linlin Li | 2021 | Data Intelligence2021，3，2： | 0 |
| 3 | Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors显示文摘Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications.Here,by referring to effective model analysis,we propose a general scheme for realizing topological magneto-valley phase transitions.More importantly,by using valley-half-semiconducting VSi2N4 as an outstanding example,we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain,electric field,and correlation effects.As a result,this gives rise to quantized versions of valley anomalous transport phenomena.Our findings not only uncover a general framework to control valley degree of freedom,but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics. | Xiaodong Zhou Run-Wu Zhang Zeying Zhang Wanxiang Feng Yuriy Mokrousov Yugui Yao | 2021 | npj Computational Materials2021，，1： | 0 |
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