| 1 | High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates显示文摘Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality,rate and mode of growth by HNPS method has been analyzed in details. | M.BOKOWSKI I.GRZEGORY B.LUCZNIK T.SOCHACKI M.KRYKO G.KAMLER S.POROWSKI | 2011 | Science China(Technological Sciences)2011，54，1： | 2 |
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