|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | TEM STUDIES FOR DIGM IN Kr ION IRRADIATED Au-Cu BILAYERS显示文摘TEMSTUDIESFORDIGMINKrIONIRRADIATEDAu-CuBILAYERS￥GaoYuzun;AlexanderDE;RehnLE(GeneralResearchinstituteforNonferrousMetals,Beiji... | Gao Yuzun Alexander D E Rehn L E(General Research institute for Nonferrous Metals, Beijing 100088 Argonne National Laboratory, IL 60439,U.S.A.) | 1996 | 中国有色金属学会会刊:英文版1996，6，3： | 0 |
| 2 | In situ Observation of Mo Implanted HI3 Steel by Transmission Electron Microscopy显示文摘In situ observation in high voltage transmission electron microscope(HVEM)was used to investigate the structure of Mo implanted HI3 steel.Instead of tempered Martensite structure,the implanted layer has a fine grain structure.When the implanted specimen is heated inside the HVEM,the fine grain structure does not change until 500℃.The electron diffraction pattern of precipitates FeMo appears at 500℃.Recrystallization and grain growth occur at 650℃. | GAO Yuzun SUN Guiru ZHANG Tonghe JI Chengzhou YANG Janhua | 1991 | Chinese Physics Letters1991，8，2： | 0 |
| 3 | Effect of Oxygen and Hydrogen on Electron Irradiated Defects of Si Single Crystal显示文摘Effect of oxygen and hydrogen on electron irradiated defects of Si single crystal has been studied.These CZ-Si andFZ-Si single crystal specimens were irradiated by electron beam with energy of~IMV in HVEM at temperature be-tween 298K and 773K.It was found that irradiated defects were easier to be produced in Si single crystal containing ox-ygen than in Si containing hydrogen.The irradiated defects had the larger density and shorter incubation time in Si con-taining oxygen.The bar-like defects,stacking faults and loops were along〈110〉direction.Bar-like defects and stack-ing faults had the Burgers vector〈116〉type and the stacking faults were on the(113) plane.The unfault process pro.duced interstitial loops with Burgers vectora/2〈110〉. | Gao, Yuzun Takahashi, H. Sato, Y. Takeyama, T. Nagasaki, R. | 1989 | Rare Metals1989，9，1： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员