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| 1 | Rough law energy and measurement of ■-decomposition rough law显示文摘By employing function one-direction S-rough sets and rough law generation method based on function S-rough sets, ■-decomposition law and ■-decomposition rough law are proposed, and the measurement of rough law variation in the process of rough law ■-decomposition is researched. The concepts of law energy and attribute ■-interference degree are presented, which make the variation of rough law become measurable. ■-decomposition law energy characteristic theorem, ■-decomposition law energy inequality theorem,■-decomposition rough law energy characteristic theorem, and ■-decomposition law energy mean value theorem are presented. | Shunliang Huang Huafeng Yang Kaiquan Shi | 2010 | Journal of Systems Engineering and Electronics2010，21，1： | 2 |
| 2 | Highly transmitted silver nanowires-SWCNTs conductive flexible film by nested density structure and aluminum-doped zinc oxide capping layer for flexible amorphous silicon solar cells显示文摘Indium tin oxide(ITO)is widely used in transparent conductive films(TCFs);however,several disadvan-tages,such as high cost and toxicity of indium,limit its applications.Therefore,it is necessary to develop other materials that can replace ITO.Silver nanowires or single walled carbon nanotubes(SWCNTs)have attracted considerable interest owing to their unique electrical,optical,and thermal stabilities,and thus,they are ideal for transparent electrodes for flexible or stretchable devices.In this study,we develop a novel architecture of composite TCFs on a polyethylene naphthalate(PEN)flexible substrate.Herein,the silver nanowires-SWCNTs films with nested density structure were fabricated through ultrasonic spraying technology by varying the spraying width.For achieving enhanced transmittance,we combined the larger irregular grids and holes with fewer nanowires stacked in the longitudinal direction,more optical chan-nels,and good carrier transport.Thereafter,aluminum-doped zinc oxide(AZO)was used as capping to the structure for enhancing the optical properties of the TCFs.The silver nanowires-SWCNTs/AZO(ASA)bilayer was obtained in the optimized architecture,which showed superior optoelectronic performance to that shown by commercial ITO with a high optical transmittance of 92%at the wavelength of 550 nm and low sheet resistance of 17/sq.In the specially structured conductive film,the significant improvement in the transmittance and uniformity of the sheet resistance was attributed to the effective nanowire junc-tion contact compared to that in ordinary structure of silver nanowires,which reduced the mean density of small clusters of nanowires.Compared with the silver nanowires-SWCNTs films,the ASA bilayer film exhibited excellent resistance to boiling,mechanical bending(10,000 cycles),and CO_(2)plasma.Moreover,the sheet resistance of ASA changed slightly after the tape tests,thereby illustrating a strong adhesion to the PEN substrate after the enclosure of AZO.Meanwhile,the AZO capping layer can enhance the op-tical transmittance between 600 and 1500 nm.In addition,the amorphous silicon photovoltaic devices with flexible ASA TCFs exhibited a power conversion efficiency(PCE)of 8.67%.After bending for 3000 times,the PCE was decreased to 8.20%,thereby demonstrating the potential of developed films to replace traditional ITO. | Shunliang Gao Xiaohui Zhao Qi Fu Tianchi Zhang Jun Zhu Fuhua Hou Jian Ni Chengjun Zhu Tiantian Li Yanlai Wang Vignesh Murugadoss Gaber A.M.Mersal Mohamed M.Ibrahim Zeinhom M.El-Bahy Mina Huang Zhanhu Guo | 2022 | Journal of Materials Science & Technology2022，，31： | 2 |
| 3 | Hiding dependence-discovery of F-hiding laws and system laws显示文摘Function one direction S-rough sets have dynamic characteristics and law characteristics.By using the function one direction S-rough sets,this article presents the concepts of the f-hiding law,F-hiding law,f-hiding law dependence and F-hiding law dependence.Based on the concepts above,this article proposes the hiding-dependence theorem of f-hiding laws,the hiding-dependence theorem of F-hiding laws,the hiding-dependence separation theorem,the hiding dependence-discovery principle of unknown laws.Finally,the application of the hiding dependence of hiding laws in the discovery of system laws is given. | Zhou Houyong Huang Shunliang Shi Kaiquan | 2009 | Journal of Systems Engineering and Electronics2009，20，3： | 2 |
| 4 | Inverse P-reasoning discovery identification of inverse P-information 显示文摘 | FAN Chengxian HUANG Shunliang | 2012 | International Journal of Digital Content Technology and its Applicatious2012，6，20： | 1 |
| 5 | Inverse P-reasoning discovery identification of inverse P-information显示文摘 | FAN Chengxian HUANG Shunliang | 2012 | International Journal of Digital Content Technology and its Applications2012，6，20： | 1 |
| 6 | P-sets and its internal P-memory characteristics 显示文摘 | HUANG Shunliang WANG Wei GENG Dianyou | 2010 | An International Joumal Advances in Systems Science and Applications2010，10，2： | 1 |
| 7 | Inverse P-reasoning discovery-identification of inverse P-information显示文摘 | FAN Chengxian HUANG Shunliang | 2012 | International Journal of Digital Content Technology and its Applications2012，6，20： | 1 |
| 8 | P-sets and its internal P-memory characteristics显示文摘 | HUANG Shunliang WANG Wei GENG Dianyou | 2010 | An International Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 9 | P-sets and its internal p-memory characteristics显示文摘 | Huang Shunliang Wang Wei Geng Dianyou | 2010 | An International Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 10 | P-sets and its in- ternal P-memory characteristics显示文摘 | Huang Shunliang Wang Wei Geng Dianyou | 2010 | An International Journal Ad- vances in SyStems Science and Applications2010，10，2： | 1 |
| 11 | P-sets and its internal P-memory characteristics 显示文摘 | HUANG Shunliang WANG Wei GENG Dianyou | 2010 | An International Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 12 | P-Sets and its P-separation theorems显示文摘 | Huang Shunliang Wei Wang Geng Dianyou | 2010 | An International Journal Advances in System Science and Application2010，10，2： | 1 |
| 13 | P-sets and its internal P-memory characteristics显示文摘 | HUANG Shunliang WANG Wei GENG Dianyou | 2010 | An International Adavances in Systems Science and Applications2010，10，2： | 1 |
| 14 | Inverse P rea- soning discovery-identification of inverse P-information 显示文摘 | AN Chengxian HUANG Shunliang | 2012 | International Journal of Digital Content Technolo-gy and Its Applications2012，6，20： | 1 |
| 15 | P-sets and its internal P-memory characteristics 显示文摘 | HUANG Shunliang WANG Wei GENG Dianyou | 2010 | An International Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 16 | P-sets and its internal P-memory characteristics显示文摘 | Huang Shunliang Wang Wei Geng Dianyou | 2010 | Intemational Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 17 | P-sets and its internal P-memory characteristics显示文摘 | Huang Shunliang Wang Wei Geng Dianyou | 2010 | An International Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 18 | P-sets and its internal P-memory characteristics 显示文摘 | HUANG Shunliang WANG Wei GENG Dianyou | 2010 | An International Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 19 | P-sets and its internal P-memory characteristics 显示文摘 | HUANG Shunliang WANG Wei GENG Dianyou | 2010 | An International Journal Advances in Systems Science and Applications2010，10，2： | 1 |
| 20 | P-sets and its in ternal Immemory characteristics显示文摘 | Huang Shunliang Wang Wei Geng Dianyou | 2010 | An Internalional Journa Advances in Systerns Science and Applications2010，10，2： | 1 |
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