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14篇 您的检索式:作者名="Hadjersi"
    题名 作者 年代 出处 被引量
1Oxidizing agent concentration effect on metalassisted electroless etching mechanism in HF-oxidizing agentH2O solutions显示文摘HADJERSI T 2007Applied Surface Science2007,253,9:1
2Oxidizing Agent Concentration Effect onMetal-assisted Electroless Etching Mechanism in HF-oxidizing Agent-HgO Solutions显示文摘Hadjersi T 2007Appl Surf Sci2007,253,9:1
3Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique 显示文摘HADJERSI T BOUSSAA N ZILABDI M 2002Nuclear Instruments and Methods in Physics Research B2002,193,:1
4Oxidizing agent concentration effect on metal- assisted electroless etching mechanism in HF-oxidizing agent- H2O solutions 显示文摘HADJERSI T 2007Applied Surface Science2007,253,9:1
5The antimicrobial effect of silicon nanowires decorated with silver and copper nanoparticles显示文摘Ouarda Fellahi Rupak K Sarma Manash R Das Ratul Saikia Lionel Marcon Yannick Coffinier Toufik Hadjersi Mustapha Maamache Rabah Boukherroub 2013Nanotechnology2013,,49:1
6Formation of a-Si:H and a-Si 1- x C x :H nanowires by Ag-assisted electroless etching in aqueous HF/AgNO 3 solution显示文摘Rachida Douani Ga?lle Piret Toufik Hadjersi Jean-No?l Chazalviel Ionel Solomon 2011Thin Solid Films2011,,16:1
7显示文摘Hadjersi T Gabouze N Yamamoto N 2005Vacuum2005,80,4:1
8Oxidizing agent concentration effect on metal-assisted electroless etching mechanism in HF-oxidi- zing agent-H20 solutions显示文摘Toufik Hadjersi 2007Appl Surf Sci2007,253,:1
9Metal-assisted chemical etching of multicrystalline silicon in HF/ Na2S208 produces porous silicon 显示文摘HADJERSI T GABOUZE N ABABOU A 2005Mater Sci Forum2005,480,:1
10Blue luminescence from porous layers produced by metal-assisted chemical etching on low-doped silicon显示文摘HADJERSI T GABOUZE N YAMAMOTO N 2005Vacuum2005,80,:1
11Blue Luminescence from Porous Layers Produced by Metal-assisted Chemical Etching on Low-doped Silicon显示文摘Hadjersi T Gabouze N Yamamoto N 2005Vacuum2005,80,4:1
12Bi-assisted chemical etching of silicon in HF/ Co (NO3)2 solution 显示文摘Megouda N Hadjersi T Elkechai O Douani R Guerbous L 2009Jounal of Luminescence2009,129,:1
13Photoluminescence from photochemically etched highly resistive silicon显示文摘HADJERSI T GABOUZE N YAMAMOTO N 2004Thin Solid Films2004,459,:1
14H_2 sensing properties of modified silicon nanowires显示文摘It has been found that the silicon nanowires modified with noble metals can be used to fabricate an effective H2 gas sensor in the present study.The preparation and surface modification of silicon nanowires(Si NWs) were carried out by chemical methods. The morphology of the silicon nanowires unmodified and modified with nanoparticles of platinum, palladium, silver and gold was investigated using scanning electron microscopy(SEM). The chemical composition of the silicon nanowire layers was studied by secondary ion mass spectroscopy(SIMS) and energy dispersive X-ray analysis(EDX). The structures of type metal/Si NWs/p-Si/Al were fabricated. The electrical characterization(I–V) was performed in primary vacuum and H2 at different concentrations. It was found that the metal type used to modify the Si NWs strongly influenced the I–V characteristics. The response of these structures toward H2 gas was studied as a function of the metal type. Finally, the sensing characteristics and performance of the sensors were investigated.Latefa Baba Ahmed Sabrina Naama Aissa Keffous Abdelkader Hassein-Bey Toufik Hadjersi 2015Progress in Natural Science:Materials International2015,25,2:0
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