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| 1 | A new support for the immobilization of penicillin acylase 显示文摘 | Jing He Li Xiaofen Duan Xue | 2000 | J Mol Catal B : Enzyme2000，11，1： | 1 |
| 2 | Imaging manifestations and the related clinical characteristics of chest trauma during the Yushu Earthquake显示文摘The purpose of this study was focused on the imaging features of the chest trauma and its relation to clinical characteristics. All the injured patients were from the Yushu Earthquake areas on days April 14 - 23,2010. After an initial treatment,the injurers were rapidly transported from Yushu at an altitude of 4 000 m via air to Xining at 2 260 m within 6~8 h,and promptly admitted to Qinghai Provincial People’s Hospital. A total of 130 wounded injurers who had high suspicion of chest injuries all had examinations of Chest X-ray and computed tomography(CT)images. Of them 63 injurers presented at least one of the features of the chest trauma in imaging with a positive rate of 48.5 %. Of these,37 cases (28.5 %) were multi-system with multiple injuries ,33 cases (25.4 %) were chest trauma with multi-injury types,which included thoracic fractures in 54 cases (85.7 %),pleural injury in 56 cases (88.9 %),lung injury in 54 cases (85.7 %),lungs complications in 37 cases (58.7 %),and extrapulmonary complications of 35 cases (55.6 %). The radiological data were analyzed retrospectively. The features of chest trauma in Yushu Earthquake,the complications of chest injuries,and the relation between imaging findings and clinical manifestations,as well as the differences of chest trauma between Yushu Earthquake and Wenchuan Earthquake were discussed in detail. | Zhang Zhijin Tang Guibo He Xiaofen Zhang Ming Wu Dangjie Geng Gasongbao | 2013 | Engineering Sciences2013，11，2： | 1 |
| 3 | Diffusion-activated high performance ZnSnO/Yb_(2)O_(3) thin film transistors and application in low-voltage-operated logic circuits显示文摘The flourishing metal-oxide high-k dielectric materials have been regarded as the vital components of low voltage operated flexible transparent electronic devices.We herein report that ytterbium oxide(Yb_(2)O_(3))and ZnSnO(ZTO)thin films were firstly integrated into ZTO-based thin film transistors(TFTs)with superior performance.Results have indicated that the 500℃-annealed ZTO/Yb_(2)O_(3) TFTs possess the large saturation mobility of 9.1 cm^(2) V-1S^(-1) and the high on/off current ratio of 2.15×10^(7),which even surpass those of reported In-based TFTs.The deteriorative electrical properties in the aging process can be attributed to the carrier capture mechanism.However,the 460℃-processed TFTs demonstrate a tenfold increase in saturated mobility and an increase in on/off current ratio after 10 days aging.The inspiring electrical properties are attributed to the diffusion-activated carrier enhancement mechanism and electrons donor role of water molecular,which introduces a facile method to boost the device performance at lower processing temperatures.The neglected threshold voltage variations of 0.06 V and-0.2V have been detected after bias stability experiments.The superior bias stability can be attributed to the charge delay effect induced by the continuous electric field.Meanwhile,the ultrahigh on/off current ratio of 1.1×10^(7) and the recoverable transferring performance have verified the aging-activated mechanism.To confirm its potential application in digital circuits,a resistor-loaded inverter with gain of 5.6 has been constructed and good dynamic response behavior have been detected at a low voltage of 2V.As a result,it can be concluded that the high temperature annealing TFTs need immediate encapsulation,while the performance of the lower temperature processing samples can be optimized after aging treatment,indicating the potential prospect in low power consumption large-scale flexible transparent devices. | Bing Yang Gang He Wenhao Wang Yongchun Zhang Chong Zhang Yufeng Xia Xiaofen Xu | 2021 | Journal of Materials Science & Technology2021，，11： | 0 |
| 4 | The Influence of Age on Blood Flow and Temperature of Acupuncture Points: A Study based on Laser Doppler Flowmetry and Infrared Thermography显示文摘Background:To date,there has been a great lack of investigation on the influence of age on blood flow and temperature of acupoints in specific regions.Objective:This study aimed to determine the association between different age categories and acupoint blood flow/temperature on the forearm.Methods:Acupoint blood flow and temperature were measured in healthy adults of different age categories using laser doppler flowmetry(LDF)and infrared thermography(IRT),respectively.A total of 60 eligible healthy volunteers were divided into the young group,mid age group and old age group.All groups received LDF and IRT examination.Shenmen(HT7),Shaohai(HT3),Taiyuan(LU9)and Chize(LU5)of the Heart and Lung meridians on the forearm were selected as 4 test acupoints.Results:Regarding blood flow of the 4 test acupoints,the PU of Taiyuan(LU9)in the old age group was sig-nificantly different compared with that of the young age group(P<0.05)and the mid age group(P<0.05),while there was no significant difference in PU of the other acupoints between 3 groups(all P>0.05).Simi-larly,regarding acupoint temperature of the 4 test sites,the temperature of Shaohai(HT3)in the old age group was significantly different compared with that of the mid age group(P<0.05),while there was no significant difference in the temperature of the other 3 acupoints between 3 age groups(all P>0.05).Conclusion:Age category tends to have notable influence on the blood flow and temperature in specific acupoints in the forearm.Therefore,particular concerns should be taken into consideration regarding the effect of age differences for future studies in this field.Nevertheless,further studies with a large sample size and more test acupoints are needed to further verify current findings. | Yajun Zhang Xiaoyu Li Xiaofen He Yongliang Jiang Hantong Hu Jiali Lou Ruijie Ma Yi Liang Xiaomei Shao Jianqiao Fang | 2022 | Clinical Complementary Medicine and Pharmacology2022，2，3： | 0 |
| 5 | Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits显示文摘The homojunction based on Ti_(3)C_(2)T_(x) MXene-doped In_(2)O_(3) and indium oxide as the channel layer is real-ized in high-performance metal oxide thin film transistors(TFTs).Doping of MXene into In_(2)O_(3) results in n-type semiconductor behavior,realizing tunable work function of In_(2)O_(3) from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%.MXene-doped In_(2)O_(3)-based homojunction TFT presents optimal per-formance with electron mobilities of greater than 27.10 cm^(2)/(V s)at 240°C,far exceeding the maximum mobility of 3.91 cm^(2)/(V s)for single-layer In_(2)O_(3)TFTs.The improved performance originates from boosting of a two-dimensional electron gas(2DEG)formed at carefully engineered In_(2)O_(3)/MXene-doped In_(2)O_(3)ox-ide homojunction interface.Besides,the transformation in conduction mechanism leads to better stability of MXene-doped In_(2)O_(3) homojunction devices compared to undoped bilayer In_(2)O_(3).Low-frequency noise further illustrates that doping MXene into In_(2)O_(3) helps to reduce the device trap density,demonstrating excellent electrical performance.A resistor-loaded unipolar inverter based on In_(2)O_(3)/0.5%MXene-In_(2)O_(3)TFT has demonstrated full swing characteristics and a high gain of 13.The effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability,but also provides an ef-fective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics. | Leini Wang Gang He Wenhao Wang Xiaofen Xu Shanshan Jiang Elvira Fortunato Rodrigo Martins | 2023 | Journal of Materials Science & Technology2023，，28： | 0 |
| 6 | Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyO_(x) transistors and exploration in digital circuits显示文摘In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal decomposition,morphology,crystallization behavior,and chemical compositions of DyO_(x) and InZnO films have been investigated respectively.Results have demonstrated that air-annealed InZnO/DyO_(x)TFTs possess the improved electrical performance,including ultrahigh on/off current ratio of 1×10^(9),larger saturation mobility of 12.6 cm^(2) V-1 s^(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity(RH)of 40%air ambient,which has been explored by the variable range-hopping(VRH)percolation model and energy band theory.The distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 V.To confirm its feasible application in digital circuit,a resistor-loaded inverter based on InZnO/DyO_(x)TFTs has been constructed.A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 V.As a result,it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyO_(x)TFTs,indicating its potential application prospects in flexible transparent electronics with low power consumption. | Bing Yang Gang He Qian Gao Wenhao Wang Yongchun Zhang Yufeng Xia Xiaofen Xu Leini Wang Miao Zhang | 2021 | Journal of Materials Science & Technology2021，，28： | 0 |
| 7 | Optimization of electrical performance and stability of fully solution-driven α-InGaZnO thin-film transistors by graphene quantum dots显示文摘This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate dielectrics.Compare with pure IGZO TFTs,GQDs-modifiedα-IGZO TFTs devices with optimized doping content have demonstrated better performances,including a larger field-effect mobility(μFE)of 35.91 cm 2 V^(-1)s^(-1),a higher on/offcurrent ratio(I ON/I OFF)of 5.04×10^(8),a smaller subthreshold swing(SS)of 0.11 V dec^(-1)and a smaller interfacial trap states(D it,1.57×10^(12)cm^(−2)).Moreover,the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml^(-1)have shown excellent stability under bias stress and illumination stress conditions.To demonstrate the potential applications ofα-IGZO TFTs in logic circuits,a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrO x has been integrated,demonstrating good dynamic behavior and a high gain of 9.3.Low-frequency noise(LFN)characteristics of GQDs-IGZO/ZrO x TFTs have suggested that the fluctua-tions in mobility are the noise source.Based on all the experimental findings,it can be concluded that solution-processed GQDs-IGZO/ZrO x TFT may envision promising applications in optoelectronics. | Xiaofen Xu Gang He Leini Wang Wenhao Wang Shanshan Jiang Zebo Fang | 2023 | Journal of Materials Science & Technology2023，，10： | 0 |
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