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| 1 | Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics显示文摘Maximizing band degeneracy and minimizing phonon relaxation time are proven to be successful for advancing thermoelectrics.Alloying with monotellurides has been known to be an effective approach for converging the valence bands of PbTe for electronic improvements,while the lattice thermal conductivity of the materials remains available room for being further reduced.It is recently revealed that the broadening of phonon dispersion measures the strength of phonon scattering,and lattice dislocations are particularly effective sources for such broadening through lattice strain fluctuations.In this work,a fine control of MnTe and EuTe alloying enables a significant increase in density of electron states near the valence band edge of PbTe due to involvement of multiple transporting bands,while the creation of dense in-grain dislocations leads to an effective broadening in phonon dispersion for reduced phonon lifetime due to the large strain fluctuations of dislocations as confirmed by synchrotron X-ray diffraction.The synergy of both electronic and thermal improvements successfully leads the average thermoelectric figure of merit to be higher than that ever reported for p-type PbTe at working temperatures. | Yixuan Wu Pengfei Nan Zhiwei Chen Zezhu Zeng Siqi Lin Xinyue Zhang Hongliang Dong Zhiqiang Chen Hongkai Gu Wen Li Yue Chen Binghui Ge Yanzhong Pei | 2020 | Research2020，，1： | 6 |
| 2 | Analysis of severe human adenovirus infection outbreak in Guangdong Province,southern China in 2019显示文摘During 2018–2019,a severe human adenovirus(HAdV)infection outbreak occurred in southern China.Here,we screened 18 respiratory pathogens in 1704 children(≤14 years old)hospitalized with acute respiratory illness in Guangzhou,China,in 2019.In total,151 patients had positive HAdV test results;34.4%(52/151)of them exhibited severe illness.HAdV infection occurred throughout the year,with a peak in summer.The median patient age was 3.0(interquartile range:1.1–5.0)years.Patients with severe HAdV infection exhibited increases in12 clinical indexes(P≤0.019)and decreases in four indexes(P≤0.007),compared with patients exhibiting nonsevere infection.No significant differences were found in age or sex distribution according to HAdV infection severity(P>0.05);however,the distributions of comorbid disease and HAdV co-infection differed according to HAdV infection severity(P<0.05).The main epidemic types were HAdV-3(47.0%,71/151)and HAdV-7(46.4%,70/151).However,the severe illness rate was significantly higher in patients with HAdV-7(51.4%)than in patients with HAdV-3(19.7%)and other types of HAdV(20%)(P<0.001).Sequencing analysis of genomes/capsid genes of 13 HAdV-7 isolates revealed high similarity to previous Chinese isolates.A representative HAdV-7isolate exhibited a similar proliferation curve to the curve described for the epidemic HAdV-3 strain Guangzhou01(accession no.DQ099432)(P>0.05);the HAdV-7 isolate exhibited stronger virulence and infectivity,compared with HAdV-3(P<0.001).Overall,comorbid disease,HAdV co-infection,and high virulence and infectivity of HAdV-7 were critical risk factors for severe HAdV infection;these data can facilitate treatment,control,and prevention of HAdV infection. | Wenkuan Liu Shuyan Qiu Li Zhang Hongkai Wu Xingui Tian Xiao Li Duo Xu Jing Dai Shujun Gu Qian Liu Dehui Chen Rong Zhou | 2022 | Virologica Sinica2022，37，3： | 5 |
| 3 | Progress on deuterated potassium dihydrogen phosphate(DKDP)crystals for high power laser system application显示文摘In this review,we introduce the progress in the growth of large-aperture DKDP crystals and some aspects of crystal quality including determination of deuterium content,homogeneity of deuterium distribution,residual strains,nonlinear absorption,and laser-induced damage resistance for its application in high power laser system.Large-aperture high-quality DKDP crystal with deuteration level of 70%has been successfully grown by the traditional method,which can fabricate the large single-crystal optics with the size exceeding 400 mm.Neutron diffraction technique is an efficient method to research the deuterium content and 3D residual strains in single crystals.More efforts have been paid in the processes of purity of raw materials,continuous filtration technology,thermal annealing and laser conditioning for increasing the laser-induced damage threshold(LIDT)and these processes enable the currently grown crystals to meet the specifications of the laser system for inertial confinement fusion(ICF),although the laser damage mechanism and laser conditioning mechanism are still not well understood.The advancements on growth of large-aperture high-quality DKDP crystal would support the development of ICF in China. | Mingxia Xu Baoan Liu Lisong Zhang Hongkai Ren Qingtian Gu Xun Sun Shenglai Wang Xinguang Xu | 2022 | Light(Science & Applications)2022，11，9： | 1 |
| 4 | Band alignment and polarization engineering inκ-Ga_(2)O_(3)/GaN ferroelectric heterojunction显示文摘Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.In this work,we report on the heteroepitaxial construction,band structure alignment and polarization engineering of the single-phasedκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with a valence band offset of(1.74±0.1)eV and a conduction band offset of(0.29■0.1)eV.Besides the band edge discontinuity,charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV,respectively,at theκ-Ga_(2)O_(3)surface andκ-Ga_(2)O_(3)/GaN interface.The polarization switching properties of ferroelectricκ-Ga_(2)O_(3)are identified with a remanent polarization of approximately 2.7μC/cm^(2)via the direct hysteresis remanent polarization/voltage(P-V)loop measurement.These findings allow the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunction for the application of power electronic devices,advanced memories and even ultra-low loss negative capacitance transistors. | Yanting Chen Hongkai Ning Yue Kuang Xing-Xing Yu He-He Gong Xuanhu Chen Fang-Fang Ren Shulin Gu Rong Zhang Youdou Zheng Xinran Wang Jiandong Ye | 2022 | Science China(Physics,Mechanics & Astronomy)2022，65，7： | 1 |
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