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您的检索式：作者名="Hongxiao Lin"
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| 1 | Selective impairment in recognizing the familiarity of self faces in schizophrenia显示文摘The concept of self is a fundamental characteristic of the human mind,and the alteration of self is thought to be a core deficit of schizophrenia.Previous studies have demonstrated that patients with schizophrenia are deficient in self-face recognition.Because self faces are not only self-related but also highly familiar,it is unclear whether such deficit arises from the breakdown of the self-awareness or the failure of recognizing the familiarity of self faces.Here we directly tested these two alternatives by instructing patients with schizophrenia to recognize the identity of a morphed face created by blending face features between any of two identities from the self face,a familiar face,and a novel face.We found that there was no association between the recognition of the self and the recognition of the familiarity,suggesting these two component processes are independent in schizophrenia.Further,patients with schizophrenia were significantly worse in recognizing the familiarity of faces than normal participants,whereas no difference in the sense of self was found between the two groups.Taken together,our finding suggests that it is the sense of familiarity,not the sense of self,that is selectively impaired in self-face recognition in schizophrenia.Thus,our study challenges the hypothesis that the deficit in self-face recognition in schizophrenia reflects the breakdown of self-awareness. | ZHANG Lin ZHU Hong XU Miao JIA HongXiao LIU Jia | 2012 | Chinese Science Bulletin2012，57，15： | 9 |
| 2 | Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM显示文摘Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characterize and analyze the ML structures.The high resolution transmission electron microscopy(HRTEM)results show that the ML structure with 20 nm Si_(0.7)Ge_(0.3)features the best crystal quality and no defects are observed.Stacked Si_(0.7)Ge_(0.3)ML structures etched by three different methods were carried out and compared,and the results show that they have different selectivities and morphologies.In this work,the fabrication process influences on Si/Si Ge MLs are studied and there are no significant effects on the Si layers,which are the channels in lateral gate all around field effect transistor(L-GAAFET)devices.For vertically-stacked dynamic random access memory(VS-DRAM),it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness.These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires,nanosheet L-GAAFETs,and DRAM devices. | Zhenzhen Kong Hongxiao Lin Hailing Wang Yanpeng Song Junjie Li Xiaomeng Liu Anyan Du Yuanhao Miao Yiwen Zhang Yuhui Ren Chen Li Jiahan Yu Jinbiao Liu Jingxiong Liu Qinzhu Zhang Jianfeng Gao Huihui Li Xiangsheng Wang Junfeng Li Henry HRadamson Chao Zhao Tianchun Ye Guilei Wang | 2023 | Journal of Semiconductors2023，44，12： | 0 |
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