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66篇 您的检索式:作者名="Houssa"
    题名 作者 年代 出处 被引量
1Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface显示文摘Daniele Chiappe Emilio Scalise Eugenio Cinquanta Carlo Grazianetti Bas van den Broek Marco Fanciulli Michel Houssa Alessandro Molle 2014Adv. Mater2014,,:7
2Vibrational properties of silicene and germanene显示文摘Emilio Scalise Michel Houssa Geoffrey Pourtois B. van den Broek Valery Afanas'ev andAndr Stesmans 2013Nano Research2013,6,1:5
3Topological to trivial insulating phase transition in stanene显示文摘stanene 的电子性质, graphene 的 Sn 对应物理论上用第一原则的模拟被学习。对一个 out-of-plane 电场或由量监禁效果导致的小绝缘阶段转变拓扑被预言。结果加亮潜力在门电压使用 stanene nanoribbons 控制了无驱散的基于纺纱的设备并且被用来将最小的 nanoribbon 宽度放为如此的设备,它典型地是约 5 nm。Michel Houssa Bas van den Broek Konstantina Iordanidou Anh Khoa Augustin Lu Geoffrey Pourtois Jean-Pierre Locquet Valery Afanas'ev Andre Stesmans 2016Nano Research2016,9,3:2
4Molecular dynamics study of the structure and thermophysical properties of model sI clathrate hydrates显示文摘CHIALVO A A HOUSSA M CUMMINGS P T 2002The Journal of Physical Chemistry B2002,106,2:1
5Turkey' s mineral resources显示文摘Houssa O E 1999Industrial Minends1999,,379:1
6Physiological signals that induce flowering显示文摘 HAVELENGE A HOUSSA C 1993Plant Cell1993,5,:1
7Variation in the fixed charge density of SiO2/ZrO2 gate dielectric stacks during postdeposition oxidation显示文摘Houssa M Afanas ev V V Stesmans A 2000Applied Physics Letters2000,77,:1
8Turkey's mineral resources 显示文摘Houssa 0 E 1999Industrial Minerals1999,,379:1
9Physiological signals that induce flowering显示文摘Bernier G Havelange A Houssa C 1993The Plant Cell1993,5,10:1
10Physiological singals that induce flowering 显示文摘Bemier G Havelange A Houssa C 1993Plant Ce111993,,5:1
11Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide 显示文摘DELABIE A BELLENGER F HOUSSA M 2007Appl Phys Lett2007,91,08:1
12Electrical properties of high-k gate dielectrics: Challenges, current issues, and possible solutions 显示文摘Houssa M Pantisano L Ragnarsson L A 2006Materials Science & Engineering R2006,51,:1
13Trap-assisted tunneling in high permittivity gate dielectric stacks 显示文摘HOUSSA M TUOMINEN M NAILI M AFANAS'EV V STESMANS A HAUKKA S HEYNES M M 2000J Appl Phys2000,87,:1
14Physiological signals that induce flowering显示文摘Bernier G Havelange A Houssa C 1993Plant Cell1993,5,:1
15Physiological signals that induce flowering显示文摘Bernier G Havelange A Houssa C 1993Plant Cell1993,,5:1
16显示文摘 Naili M Bender H 2001Semicond Sci Technol2001,16,:1
17Polarity depen- dence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks 显示文摘 Afanas'ev V V Stesmans A 2001Appl Phys Lett2001,79,:1
18Upper digestive bleedings after cardiac surgery 显示文摘Ait Houssa M Selkane C Moutaki Allah Y 2007Ann Cardiol Angeiol ( Paris)2007,56,3:1
19Physiological Signals hatlnduce Flowering显示文摘Bernier G Havelange A Houssa C 1993The Plant Cell1993,5,:1
20显示文摘 Afanas'ef Stesmans A 2000Appl Phys Lett2000,77,12:1
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