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| 1 | Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods显示文摘Recently,complementary metal-oxide semiconductor image sensors(CISs)have become a key element of the imaging instrument and have been widely used in many scientific applications[1,2]such as space remote sensing,medical imaging,and nuclear power plant monitoring.However,CISs used in these harsh radiation environments are susceptible to damage by particles or rays. | Yuanyuan XUE Zujun WANG Minbo LIU Baoping HE Zhibin YAO Jiangkun SHENG Wuying MA Guantao DONG Junshan JIN | 2017 | Science China(Information Sciences)2017，60，12： | 6 |
| 2 | Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors显示文摘Dear editor,CMOS image sensors (CISs) present numerous advantages and have become feasible alternatives for CCDs (charge coupled devices) in satellite imaging system, nuclear industry, and particle detection (1–3)However, CISs used in these applications are often operated under harsh radiation environments and are susceptible to total ionizing dose (TID) and displacement damage. | Zujun WANG Yuanyuan XUE Wei CHEN Rui XU Hao NING Baoping HE Zhibin YAO Minbo LIU Jiangkun SHENG Wuying MA Guantao DONG | 2019 | Science China(Information Sciences)2019，62，6： | 4 |
| 3 | Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method显示文摘The dark signal degradation of the CMOS image sensor(CIS) was induced by neutron radiation,and it was modeled by Geant4, which is a three-dimensional Monte Carlo code. The simplified model of the CIS array was established according to the actual pixel geometry, material, and doping concentration. Nuclear elastic interaction and capture interaction were included in the physical processes, and the displacement damage dose in the space charge region of the pixel was calculated. The mean dark signal and dark signal distribution were modeled using Geant4, and the physical mechanisms were analyzed. The modeling results were in good agreement with the experimental and theoretical results. | Yuanyuan XUE Zuun WANG Wei CHEN Baoping HE Zhibin YAO Minbo LIU Jiangkun SHENG Wuying MA Guantao DONG Junshan JIN | 2018 | Science China(Information Sciences)2018，61，6： | 2 |
| 4 | 0.79 ppm scale-factor nonlinearity whole-angle microshell gyroscope realized by real-time calibration of capacitive displacement detection显示文摘Whole-angle gyroscopes have broad prospects for development with inherent advantages of excellent scale factor,wide bandwidth and measurement range,which are restrictions on rate gyroscopes.Previous studies on the whole-angle mode are based mostly on the linear model of Lynch,and the essential nonlinearity of capacitive displacement detection is always neglected,which has significant negative effects on the performance.In this paper,a novel realtime calibration method of capacitive displacement detection is proposed to eliminate these nonlinear effects.This novel method innovatively takes advantage of the relationship between the first and third harmonic components of detective signals for calibration.Based on this method,the real-time calibration of capacitive displacement detection is achieved and solves the problems of traditional methods,which are usually related to the vibration amplitude,environmental variations and other factors.Furthermore,this novel calibration method is embedded into a whole-angle control system to restore the linear capacitive response in real time and then combined with a microshell resonator for the first time to exploit the enormous potential of an ultrahigh Q factor and symmetric structure.The effectiveness is proven because the angle drift is reduced significantly to improve the scale-factor nonlinearity by 14 times to 0.79 ppm with 0.0673/h bias instability and a 0.0017s rate threshold,which is the best reported performance of the MEMS whole-angle gyroscope thus far.More importantly,this novel calibration method can be applied for all kinds of resonators with the requirement of a linear capacitive response even under a large resonant amplitude. | Jiangkun Sun Sheng Yu Yongmeng Zhang Qingsong Li Xiang Xi Kun Lu Xuezhong Wu Dingbang Xiao | 2021 | Microsystems & Nanoengineering2021，7，5： | 1 |
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