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| 1 | Three‐terminal perovskite/integratedbackcontactsilicon tandem solar cells under low light intensity conditions显示文摘The current climate and energy crisis urgently needs solar cells with efficiencies above the 29% single junction efficiency bottleneck.Silicon/perovskite tandem solar cells are a solution,which is attracting much attention.While silicon/perovskite tandem cells in 2-terminal and 4-terminal configurations are well documented,the three-terminal concept is still in its infancy.It has significant advantages under low light intensities as opposed to concentrated sunlight,which is the critical factor in designing tandem solar cells for low-cost terrestrial applications.This study pre-sents novel studies of the sub-cell performance of the first three-terminal perovskite/silicon selective band offset barrier tandem solar cells fabricated in an ongoing research project.This study focuses on short circuit current and operating voltages of the subcells under light intensities of one sun and below.Lifetime studies show that the perovskite bulk carrier lifetime is insensitive to illumination,while the silicon cell's lifetime decreases with decreasing light intensity.The combination of perovskite and silicon in the 3T perovskite-silicon tandem therefore reduces the sensitivity of V_(OC) to light intensity and maintains a relatively higher V_(OC) down to low light intensities,whereas silicon single-junction cells show a marked decrease.This technological advantage is proposed as a novel advantage of three-terminal perovkite/silicon solar cells for low light intensities of one sun or less. | Hiroyuki Kanda Valentin Dan Mihailetchi Marie-Estelle Gueunier-Farret Jean-Paul Kleider Zakaria Djebbour Jose Alvarez Baranek Philippe Olindo Isabella Malte R.Vogt Rudi Santbergen Philip Schulz Fiala Peter Mohammad K.Nazeeruddin James P.Connolly | 2022 | Interdisciplinary Materials2022，1，1： | 2 |
| 2 | Stereochemistry of diphenylsⅩⅩⅪ′:preparation and properties of 2,2′,6,6′-tetrafluo-3,3′-dicarboxy-5,5′-dichlorodiphenyl显示文摘 | Kleiderer E C Adams R | 1983 | J Am Chem Soc1983，，03： | 1 |
| 3 | Pilot Design for OFDM with Null Edge Subcarriers显示文摘 | BAXLEY R J KLEIDER J E ZHOU G T | 2009 | IEEE Transactions on Wireless Communication2009，08，01： | 1 |
| 4 | Pilot design for OFDM with null edge subcarriers 显示文摘 | Baxley R J Kleider J E Zhou G T | 2009 | IEEE Transactions on Wireless Communication2009，8，8： | 1 |
| 5 | Study of pm-SiGe:H thin films for p-i-n devices and tandem solar cells显示文摘 | GUEUNIER M E KLEIDER J P CHATFERJEE P | 2003 | Thin Solid Films2003，427，： | 1 |
| 6 | Spherical microphone array beam steering using Wigner-D weighting显示文摘 | RAFAELY B KLEIDER M | 2008 | IEEE Signal Process2008，15，： | 1 |
| 7 | Properties of polymorphous silicon-germanium alloys deposited under high hydrogen dilution and at high pressure显示文摘 | GUEUNIER M E KLEIDER J P BRUGGEMEANN R | 2002 | J Appl Phys2002，92，： | 1 |
| 8 | Preamble and Embedded Synchronizanon for BF Carrier FrequencyHopped OFDM显示文摘 | KLEIDER J E MAALOULI G GIFFORD S | 2005 | IEEE Journal on Selected Areas in Communications2005，23，5： | 1 |
| 9 | Pilot Design for OFDM with Null Edge Subcarriers显示文摘 | Baxley R J Kleider J E Zhou G T | 2009 | IEEE Transaction on Wireless Communications2009，8，1： | 1 |
| 10 | Preamble and embedded synchronization for RF carrier frequency-hopped OFDM显示文摘 | J E Kleider G Maalouli S Gifford S Chuprun | 2005 | IEEE Journal on Selected Areas in Communications2005，23，5： | 1 |
| 11 | Investigation of a-Si: H/c-Si Heterojunction Solar Cells Interface Properties显示文摘 | Gudovskikh A S Kleider J P Froitzheim A | 2004 | Thin Solid Films2004，，： | 1 |
| 12 | Efficacy and safety of intravenous Diltiazem for treatment of atrial fibrillation and atrial flutter显示文摘 | Salerno DM Dias VC Kleider RE | 1989 | Am J Cardiol1989，63，15： | 1 |
| 13 | A formula for thermal stability (Tm) prediction of PNA/DNA duplexes显示文摘 | Giesen U Kleider W Berding C | 1998 | Nucl Acids Res1998，26，21： | 1 |
| 14 | Properties of polymorphous sillion-germanium alloys deposited under high hudrofen dilution and at high pressure 显示文摘 | GUEUNIER M E KLEIDER J P BRUGGEMEANN R | 2002 | J APPL Pbys2002，92，： | 1 |
| 15 | Preamble and embedded synchronization for RF carrier frequency-hopped OFDM显示文摘 | Kleider J E Ghassan M Gifford S | | 0，，05： | 1 |
| 16 | Electronic properties of CVD polystalline diamond films 显示文摘 | Alvarez J Brambilla A Kleider J P | 2001 | Diamond Relat Mater2001，10，： | 1 |
| 17 | Preamble and Embedded Synchronization for RF Carrier Frequency Hopped OFDM显示文摘 | KLEIDER J E GIFFORD S CHUPRUN S | 2005 | IEEE Journal on Selected Areas in Communications2005，23，05： | 1 |
| 18 | Preamble and embed- ded synchronization for RF carrier frequency hopped OFDM 显示文摘 | Kleider J E Maalouli G Gifford S | 2005 | IEEE Journal on Selected Areas in Communications2005，23，5： | 1 |
| 19 | Properties of a new a-Si:H-like material:hydrogenated polymorphous silicon显示文摘 | Longeaud C Kleider J P Roca C P | 1998 | Journal of Non-Crystalline Solids1998，，： | 1 |
| 20 | 显示文摘 | Brambilla A Kleider J P | 2001 | Diamond and Related Materials2001，10，： | 1 |
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