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2篇 您的检索式：作者名="LIAN Yingwu"

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		题名	作者	年代	出处	被引量
	1	Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method显示文摘β-Ga_2O_3 is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-Ga_2O_3 crystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-Ga_2O_3 single crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga_2O_3 crystals were investigated systematically.	Shengnan Zhang Xiaozheng Lian Yanchao Ma Weidan Liu Yingwu Zhang Yongkuan Xu Hongjuan Cheng	2018	Journal of Semiconductors2018，39，8：	12
	2	Diffraction from the Second-Order Photorefractive Grating in Paraelectric KTa_(1-x)Nb_(x)O_(3) Crystals显示文摘Diffraction from the second-order photorefractive grating written in KTa_(1-x)Nb_(x)O_(3)(x=0.32)crystal with cubic phase has been observed for the first time.The behaviors of this diffraction have been investigated experimentally.Some qualitative explanations have been proposed.	LIAN Yingwu YANG Changxi YE Peixian GUAN Qingcai WANG Jiyang	1993	Chinese Physics Letters1993，10，4：	0

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