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| 1 | CVD diamond films: nucleation and growth显示文摘 | Lee S Tong Lin Zhangda Jiang Xin | 1999 | Materials Science and Engineering1999，25，4： | 1 |
| 2 | Pressure effect on diamond nucleation in hot-filament CVD system显示文摘 | Lee S T Lam Y W Zhangda Lin | 1997 | Physical Review B1997，55，15： | 1 |
| 3 | Synthesis of oriented textured diamiond films on silicon via hot filament chemical vapor deposition 显示文摘 | JIE YANG ZHANGDA LIN | 1995 | Appl Phys Lett1995，67，13： | 1 |
| 4 | PHOTOEMISSION STUDIES OF Pd/D SYSTEM WITH HIGH DEUTERIUM CONTENT显示文摘The ultraviolet photoelectron spectroscopy(UPS)spectra of Pd/D system(including absorption at high pressure)with various D contents were measured.The D absorption induced a new peak centered at about 6eV below Ef,which seems to derive from the hybridized states of deuterium and Pd electronic states.Its intensity increases with D content;only part of the D atoms in the Pd lattice are ionized at high D content. | LIU Zhenxiang XIE Kan QI Shangxue CAO Jianming LI Nan YU Xingnan LIN Zhangda | 1990 | Chinese Physics Letters1990，7，3： | 0 |
| 5 | Effects of Hydrogen Ion Bombardment on Carbon Terminated Si (111) Surface Studied by LEED and AES显示文摘Etching effects of hydrogen ions on the Si(111)-(1×1)C surface have been studied by LEED(low-energy electron diffraction)and AES(Auger electron spectroscopy).It has been found that hydrogen ions,can break the carbon-silicon covalent bonds and cause a phase transition of Si(111)-(1×1)C to the reconstructed Si(111)-(7×7)structure. | HU Xiaoming LIN Zhangda | 1994 | Chinese Physics Letters1994，11，8： | 0 |
| 6 | Observation of the Si(100)-(2×2)Phase and Measurements of Low Energy Electron Diffraction I-V Curves显示文摘A new phase of(2×2)has been observed as a result of hydrogen ion sputter etching on a clean reconstructed Si(100)-(2×1)surface using low energy electron diffraction(LEED).It has been found that the(2×1)surface first transformed into a metastable c(4×4)phase following hydrogen ion etching and after further anneal of the sample,a(2×2)phase can be obtained.Intensity vs electron energy(I-V)curves for the Si(100)-(2×2)pattern have been measured using a special video LEED system. | HU Xiaoming LIN Zhangda | 1995 | Chinese Physics Letters1995，12，9： | 0 |
| 7 | MECHANISM OF THE GROWTH, NUCLEATION, AND HETEROEPITAXY OF METASTABLE DIAMOND FILMS ON ATOMIC SCALE显示文摘The mechanism of chemical-vapor-deposited (CVD) diamond film growth has attracted increasing attention recent years, mainly due to the fact that further technological advancement (such as obtaining high-quality films, controlling film growth, and heteroepitaxial growth, etc.) requires a more detailed understanding of the fundamental phenomena responsible for diamond growth. | Zhangda LIN and Kean FENG(The State Key Laboratory of SurfacePhysics, CAS Institute of Physics) | 1998 | Bulletin of the Chinese Academy of Sciences1998，12，4： | 0 |
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