| 1 | Organic-semiconductor: Polymer-electret blends for high-performance transistors显示文摘As compared with polymer semiconductors, solution-processed small-moleculesemiconductors usually have poorer film-formation properties, which induceswide variations in device performance in terms of mobility and threshold voltage,thus severely limiting their commercial applications. In this work, we propose aneasily accessible method to improve the performance and reduce the variabilityof small-molecule organic field-effect transistors (OFETs) by blending organicsemiconductors with an insulator polymer, which is subsequently post-treatedby gate stress to generate an electret. By blending the organic semiconductor2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) with the insulatorpolystyrene, uniform transport layers with vertically phase segregated morphologyare obtained, from which the mobility and threshold voltage of OFETs are largelymanipulated. The OFETs exhibit field-effect mobilities as high as 7.5 cm2-V-l-s-1with an on/off ratio exceeding 106 in ambient conditions. This double-layerstructure provides an appropriate architecture for applying gate-stress to injectcharges into the insulating layer, forming an electret. The generation of theelectret is thermally accelerated and thus can be easily realized under moderategate-stress at elevated temperature (e.g., 60 ℃). After cooling, the electret layer servesas a floating-gate, which not only continuously tunes the threshold voltage andfield-effect mobility, but also helps minimize the contact resistances and optimizethe subthreshold swing. As an application of this method, a digital inverter isbuilt and its performance is optimized via in situ tuning of its individual transistors. | Peng Wei Shengtao Li Dongfan Li Han Yu Xudong Wang Congcong Xu Yaodong Yang Laju Bu Guanghao Lu | 2018 | Nano Research2018，11，11： | 5 |
您所在的机构暂未开通此部分的功能，请联系管理员