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| 1 | Superior mesenteric venous thrombosis after laparoscopic radical resection of rectal cancer: a report of a rare case and literature review显示文摘Mesenteric venous thrombosis(MVT) is rare, but life-threatening. MVT is often characterized by occult and nonspecific signs and symptoms. Diagnosis requires a high index of clinical suspicion, and emergency surgery is necessary to optimize patient survival, especially in people aged more than 70 years. MVT is a rare but fatal complication after laparoscopic radical surgery for rectal cancer. This study reports a case of extensive intestinal ischemic infarction caused by acute MVT after laparoscopic radical surgery for rectal cancer in a 70-year-old male. | Xinliang Jin Weijie Xue Yixiu Wang Qinkai Xue Zhiqi Gong Yongke Liu Zhaojian Niu Chengzhan Zhu | 2018 | Oncology and Translational Medicine2018，4，6： | 9 |
| 2 | High performance 1 mm AlGaN/GaN HEMT based on SiC substrate显示文摘This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor(HEMT)which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.Metal-organic chemical vapor deposition(MOCVD)was used to generate the epitaxy layers.Corresponding experiments show that the device has a gate length of 0.8 mm exhibiting drain current density of 1.16 A/mm,transconductance of 241 ms/mm,a gate-drain break-down voltage larger than 80 V,maximum current gain frequency of 20 GHz and maximum power gain frequency of 28 GHz.In addition,the power gain under the continues wave condition is 14.2 dB with a power density of 4.1 W/mm,while under the pulsed wave condition,power gain reaches 14.4 dB with power density at 5.2 W/mm.Furthermore,the two-port network impedance characteristics display great potential in microwave application. | Weijun LUO Xiaojuan CHEN Chengzhan LI Xinyu LIU Zhijing HE Ke WEI Xiaoxin LIANG Xiaoliang WANG | 2008 | Frontiers of Electrical and Electronic Engineering in China2008，3，1： | 1 |
| 3 | Selforganization of spherical PANI/TiO2 nanocomposites in reverse micelles 显示文摘 | Sui Xiaomeng Chu Ying Liu Chengzhan | 2004 | Colloids and Surfaces A:Physicochem Eng Aspects2004，251，10： | 1 |
| 4 | Synthesis of PANI/AgCl,PANI/BaSO4 and PANI/TiO2 nanocompo- sites in CTAB/hexanol/water reverse micelle显示文摘 | Sui Xiaomeng Chu Ying Liu Chengzhan | 2004 | Materials Letters2004，58，78： | 1 |
| 5 | Facile route to achieve MoSe2-Ni3Se2 on nickel foam as efficient dual functional electrocatalysts for overall water splitting显示文摘Since the catalytic activity of present nickel-based synthetic selenide is still to be improved, MoSe2-Ni3Se2 was synthesized on nickel foam (NF) (MoSe2-Ni3Se2/NF) by introducing a molybdenum source. After the molybdenum source was introduced, the surface of the catalyst changed from a single-phase structure to a multiphase structure. The catalyst surface with enriched active sites and the synergistic effect of MoSe2 and Ni3Se2 together enhance the hydrogen evolution reactions (HER), the oxygen evolution reactions (OER), and electrocatalytic total water splitting activity of the catalyst. The overpotential of the MoSe2-Ni3Se2/NF electrocatalyst is only 259 mV and 395 mV at a current density of 100 mA/cm2 for HER and OER, respectively. MoSe2-Ni3Se2/NF with a two-electrode system attains a current density of 10 mA/cm2 at 1.60 V. In addition, the overpotential of HER and OER of MoSe2-Ni3Se2/NF within 80000 s and the decomposition voltage of electrocatalytic total water decomposition hardly changed, showing an extremely strong stability. The improvement of MoSe2-Ni3Se2/NF catalytic activity is attributed to the establishment of the multi-phase structure and the optimized inoculation of the multi-component and multi-interface. | Yuqi Liu Yitong Liu Yue Yu Chengzhan Liu Shuangxi Xing | 2022 | Frontiers in Energy2022，16，3： | 0 |
| 6 | Multi-Dimensional Models of SiC Power MOSFET for Accurately Predicting the Characteristics显示文摘The paper presents a compact simulation program with integrated circuit emphasis(SPICE)model for a 1200V/19A Silicon Carbide power metallic oxide semiconductor field effect transistor(MOSFET).Based on an equivalent circuit topology,the model completely describes the static and dynamic device characteristics which include the MOSFET channel current,the nonlinear junction capacitance and the switching behavior.Especially the parasitic elements effect is also considered and studied during the modeling,testing and simulation.The model parameters are extracted based on the experimental measurement data.For convenience,the model is implemented by Verilog-A description language and embedded in the simulation software-Advanced Design System(ADS).The validity and accuracy of the model are validated by the double pulse test under inductor load.The Verification result shows that the modeling job is correct and available for prediction of the switching performance under different conditions. | Shen Diao Hong Chen Yanhu Chen Yun Bai Chengyue Yang Xinyu Liu Chengzhan Li Zhengdong Zhou | 2017 | CES Transactions on Electrical Machines and Systems2017，1，3： | 0 |
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