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您的检索式：作者名="MA Xingxia"
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| 1 | Dual-channel type tunable field-effect transistors based on vertical bilayer WS2(1−x)Se2x/SnS2 heterostructures显示文摘Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices.Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostructure-based electronics and optoelectronics as well as their optimization.Here,we report for the first time a two-step chemical vapor deposition approach for a series of WS2(1−x)Se2x/SnS2 vertical heterostructures with high-quality and large areas.The steady-state photoluminescence results exhibit an obvious composition-related quenching ratio,revealing a strong coherence between the band offset and the charge transfer efficiency at the junction interface.Based on the achieved heterostructures,dual-channel backgate field-effect transistors were successfully designed and exhibited typical composition-dependent transport behaviors,and pure n-type unipolar transistors to ambipolar transistors were realized in such systems.The direct vapor growth of these novel vertical WS2(1−x)Se2x/SnS2 heterostructures could offer an interesting system for probing new physical properties and provide a series of layered heterostructures for high-quality devices. | Biyuan Zheng Dong Li Chenguang Zhu Jianyue Lan Xingxia Sun Weihao Zheng Huawei Liu Xuehong Zhang Xiaoli Zhu Yexin Feng Tao Xu Litao Sun Gengzhao Xu Xiao Wang Chao Ma Anlian Pan | 2020 | InfoMat2020，2，4： | 3 |
| 2 | The fire-retardant properties of the melamine-modified urea-formaldehyde resins mixed with ammonium polyphosphate 显示文摘 | MA Xingxia WU Yuzhang ZHU Hailong | 2013 | J Wood Sci2013，59，5： | 1 |
| 3 | Vapor growth of V‑doped MoS_(2)monolayers with enhanced B‑exciton emission and broad spectral response显示文摘Dynamically engineering the optical and electrical properties in two-dimensional(2D)materials is of great signifcance for designing the related functions and applications.The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials;however,this approach still remains to be explored in 2D materials.Here,we systematically demonstrate the growth of vanadium-doped molybdenum disulfde(V-doped MoS_(2))monolayers via an alkali metal-assisted chemical vapor deposition method.Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS_(2)monolayers.This was also confrmed by Raman and X-ray photoelectron spectroscopy.Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS_(2)monolayers(with low doping concentration).Most importantly,through temperature-dependent study,we observed efcient valley scattering of the B-exciton,greatly enhancing its emission intensity.Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS_(2),where a clear n-type behavior transited frst to ambipolar and then to lightly p-type charge carrier transport.In addition,visible to infrared wide-band photodetectors based on V-doped MoS_(2)monolayers(with low doping concentration)were demonstrated.The V-doped MoS_(2)monolayers with distinct B-exciton emission,enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and ofer novel materials for optoelectronic applications. | Biyuan Zheng Xingxia Sun Weihao Zheng Chenguang Zhu Chao Ma Anlian Pan Dong Li Shengman Li | 2023 | Frontiers of Optoelectronics2023，16，4： | 0 |
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