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| 1 | Dual-channel type tunable field-effect transistors based on vertical bilayer WS2(1−x)Se2x/SnS2 heterostructures显示文摘Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices.Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostructure-based electronics and optoelectronics as well as their optimization.Here,we report for the first time a two-step chemical vapor deposition approach for a series of WS2(1−x)Se2x/SnS2 vertical heterostructures with high-quality and large areas.The steady-state photoluminescence results exhibit an obvious composition-related quenching ratio,revealing a strong coherence between the band offset and the charge transfer efficiency at the junction interface.Based on the achieved heterostructures,dual-channel backgate field-effect transistors were successfully designed and exhibited typical composition-dependent transport behaviors,and pure n-type unipolar transistors to ambipolar transistors were realized in such systems.The direct vapor growth of these novel vertical WS2(1−x)Se2x/SnS2 heterostructures could offer an interesting system for probing new physical properties and provide a series of layered heterostructures for high-quality devices. | Biyuan Zheng Dong Li Chenguang Zhu Jianyue Lan Xingxia Sun Weihao Zheng Huawei Liu Xuehong Zhang Xiaoli Zhu Yexin Feng Tao Xu Litao Sun Gengzhao Xu Xiao Wang Chao Ma Anlian Pan | 2020 | InfoMat2020，2，4： | 3 |
| 2 | Vindesine induces rhabdomyolysis in patients with acute lymphoblastic leukemia显示文摘Rhabdomyolysis is a syndrome which involves myoglobin and other intracellular proteins and electrolytes that occurs from breakdown of skeletal muscleand leak into the circulation.1 The clinical symptoms of rhabdomyolysis include myalgia,tenderness on palpation,weakness,brown urine,fever,myoglobinuria,electrolyte imbalance,and acute renal failure.Rhabdomyolysis can be severe enough to be life threatening.2 The causes of rhabdomyolysis include alcohol,electrolyte imbalance (potassium,phosphorus,and magnesium depletion),viral myositis,trauma,connective tissue diseases,drug reaction,toxication,exercise,metabolic diseases,seizures,and hereditary enzyme deficiencies.The exact mechanisms underlying rhabdomyolysis are not fully understood,but it is clear that muscle damage can be caused by direct muscle injury or metabolic inequalities between energy production and energy consumption. | Liu Limin Sun Yumei Si Yejun Lin Guoqiang Zhang Xingxia Zhao Guangsheng Zhang Yanming Wu Depei | 2014 | Chinese Medical Journal2014，，21： | 1 |
| 3 | Picosecond electrical response in graphene/MoTe_(2) heterojunction with high responsivity in the near infrared region显示文摘Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity.Devices based on two-dimensional(2D)transition metal dichalcogenides can exhibit picosecond photoresponse speed.However,2D materials naturally have low absorption,and when increasing thickness to gain higher responsivity,the response time usually slows to nanoseconds,limiting their photodetection performance.Here,by taking time-resolved photocurrent measurements,we demonstrated that graphene/MoTe_(2) van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction,which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd_(3)As_(2) and implies a photodetection bandwidth as wide as 100 GHz.Furthermore,we found that an additional charge carrier transport channel provided by graphene can ef-fectively decrease the photocurrent recombination loss to the entire device,preserving a high responsivity in the near-infrared region.Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response. | Zhouxiaosong Zeng Kai Braun Cuihuan Ge Martin Eberle Chenguang Zhu Xingxia Sun Xin Yang Jiali Yi Delang Liang Yufan Wang Lanyu Huang Ziyu Luo Dong Li Anlian Pan Xiao Wang | 2022 | Fundamental Research2022，2，3： | 0 |
| 4 | Vapor growth of V‑doped MoS_(2)monolayers with enhanced B‑exciton emission and broad spectral response显示文摘Dynamically engineering the optical and electrical properties in two-dimensional(2D)materials is of great signifcance for designing the related functions and applications.The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials;however,this approach still remains to be explored in 2D materials.Here,we systematically demonstrate the growth of vanadium-doped molybdenum disulfde(V-doped MoS_(2))monolayers via an alkali metal-assisted chemical vapor deposition method.Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS_(2)monolayers.This was also confrmed by Raman and X-ray photoelectron spectroscopy.Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS_(2)monolayers(with low doping concentration).Most importantly,through temperature-dependent study,we observed efcient valley scattering of the B-exciton,greatly enhancing its emission intensity.Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS_(2),where a clear n-type behavior transited frst to ambipolar and then to lightly p-type charge carrier transport.In addition,visible to infrared wide-band photodetectors based on V-doped MoS_(2)monolayers(with low doping concentration)were demonstrated.The V-doped MoS_(2)monolayers with distinct B-exciton emission,enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and ofer novel materials for optoelectronic applications. | Biyuan Zheng Xingxia Sun Weihao Zheng Chenguang Zhu Chao Ma Anlian Pan Dong Li Shengman Li | 2023 | Frontiers of Optoelectronics2023，16，4： | 0 |
| 5 | Epitaxial van der Waals contacts for low schottky barrier MoS_(2) field effect transistors显示文摘Small contact resistance and low Schottky barrier height(SBH)are the keys to energy-efficient electronics and optoelectronics.Two-dimensional(2D)semiconductors-based field effect transistors(FETs),holding great promise for next-generation information circuits,still suffer from poor contact quality at the metal–semiconductor junction interface,which severely hinders their further applications.Here,a novel contact strategy is proposed,where Bi_(2)Te_(3)nanosheets with high conductivity were in-situ epitaxially grown on MoS_(2)as van der Waals contacts,which can effectively avoid the damage to MoS_(2)caused during the device manufacturing process,leading to a high-performance MoS_(2)FET.Moreover,the small work function difference between Bi_(2)Te_(3)and MoS_(2)(Bi_(2)Te_(3):4.31 eV,MoS_(2):4.37 eV,measured by Kelvin probe force microscopy(KPFM)),enables small band bending and Ohmic contact at the junction interface.Electrical characterizations indicate that the MoS_(2)FET device with Bi_(2)Te_(3)contacts possesses a high current on/off ratio(5×107),large effective carrier mobility(90 cm^(2)/(V·s)),and low flat-band SBH(60 meV),which is favorable as compared with MoS_(2)FET with traditional Cr/Au electrodes contacts,and superior to the vast majority of the reported chemical vapor deposition(CVD)MoS_(2)-based FET device.The demonstration of epitaxial van der Waals Bi_(2)Te_(3)contacts will facilitate the application of 2D MoS_(2)nanosheet in next-generation low-power consumption electronics and optoelectronics. | Huawei Liu Lizhen Fang Xiaoli Zhu Chenguang Zhu Xingxia Sun Gengzhao Xu Biyuan Zheng Ying Liu Ziyu Luo Hui Wang Chengdong Yao Dong Li Anlian Pan | 2023 | Nano Research2023，16，9： | 0 |
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