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		题名	作者	年代	出处	被引量
	1	Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon显示文摘We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP) lasers have achieved a room-temperature continuous-wave(CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than-150 dB∕Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.	MENGYA LIAO SIMING CHEN ZHIXIN LIU YI WANG LALITHA PONNAMPALAM ZICHUAN ZHOU JIANG WU MINGCHU TANG SAMUEL SHUTTS ZIZHUO LIU PETER M.SMOWTON SIYUAN YU ALWYN SEEDS HUIYUN LIU	2018	Photonics Research2018，，11：	7
	2	Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate显示文摘In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.	Shujie Pan Victoria Cao Mengya Liao Ying Lu Zizhuo Liu Mingchu Tang Siming Chen Alwyn Seeds Huiyun Liu	2019	Journal of Semiconductors2019，40，10：	1
	3	A new model of fractured horizontal well coupling with the tight gas reser- voir at unsteady state 显示文摘	Xu MengYa Liao XinWei He YiFan	2012	Petroleum Science and Tech- nology2012，30，24：	1

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