|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon显示文摘We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP) lasers have achieved a room-temperature continuous-wave(CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than-150 dB∕Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links. | MENGYA LIAO SIMING CHEN ZHIXIN LIU YI WANG LALITHA PONNAMPALAM ZICHUAN ZHOU JIANG WU MINGCHU TANG SAMUEL SHUTTS ZIZHUO LIU PETER M.SMOWTON SIYUAN YU ALWYN SEEDS HUIYUN LIU | 2018 | Photonics Research2018，，11： | 7 |
| 2 | Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate显示文摘In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs. | Shujie Pan Victoria Cao Mengya Liao Ying Lu Zizhuo Liu Mingchu Tang Siming Chen Alwyn Seeds Huiyun Liu | 2019 | Journal of Semiconductors2019，40，10： | 1 |
| 3 | Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20℃ and 120℃显示文摘Semiconductor mode-locked lasers(MLLs)are promising frequency comb sources for dense wavelength-divisionmultiplexing(DWDM)data communications.Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions.To the best of our knowledge,however,to date,there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range.Here,we report a frequency comb source based on a quantum dot(QD)MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120℃.The two-section passively mode-locked In As QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz(corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain)with a variation of 0.07 GHz in the tone spacing over the tested temperature range.By keeping the saturable absorber reversely biased at-2 V,stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only,providing easy control of the device.At an elevated temperature of 100℃,the device shows a 6 d B comb bandwidth of 4.81 nm and 31 tones with>36 d B optical signal-to-noise ratio.The corresponding relative intensity noise,averaged between 0.5 GHz and 10 GHz,is-146 d Bc∕Hz.Our results show the viability of the In As QD MLLs as ultra-stable,uncooled frequency comb sources for low-cost,large-bandwidth,and low-energy-consumption optical data communications. | SHUJIE PAN JIANOU HUANG ZICHUAN ZHOU ZHIXIN LIU LALITHA PONNAMPALAMZIZHUO LIU MINGCHU TANG MU-CHIEH LO ZIZHENG CAO KENICHI NISHI KEIZO TAKEMASA MITSURU SUGAWARA RICHARD PENTY IAN WHITE ALWYN SEEDS HUIYUN LIU SIMING CHEN | 2020 | Photonics Research2020，8，12： | 0 |
| 4 | From past to future:on-chip laser sources for photonic integrated circuits显示文摘The realisation of on-chip light sources paves the way towards the full integration of Si-based photonic integrated circuits(PICs). | Junjie Yang Mingchu Tang Siming Chen Huiyun Liu | 2023 | Light(Science & Applications)2023，12，1： | 0 |
| 5 | Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon显示文摘Robust laser sources are a fundamental building block for contemporary information technologies.Originating from condensed-matter physics,the concept of topology has recently entered the realm of optics,offering fundamentally new design principles for lasers with enhanced robustness.In analogy to the well-known Majorana fermions in topological superconductors,Dirac-vortex states have recently been investigated in passive photonic systems and are now considered as a promising candidate for robust lasers.Here,we experimentally realize the topological Diracvortex microcavity lasers in InAs/InGaAs quantum-dot materials monolithically grown on a silicon substrate.We observe room-temperature continuous-wave linearly polarized vertical laser emission at a telecom wavelength.We confirm that the wavelength of the Dirac-vortex laser is topologically robust against variations in the cavity size,and its free spectral range defies the universal inverse scaling law with the cavity size.These lasers will play an important role in CMOS-compatible photonic and optoelectronic systems on a chip. | Jingwen Ma Taojie Zhou Mingchu Tang Haochuan Li Zhan Zhang Xiang Xi Mickael Martin Thierry Baron Huiyun Liu Zhaoyu Zhang Siming Chen Xiankai Sun | 2023 | Light(Science & Applications)2023，12，11： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员