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| 1 | Electron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-SiC显示文摘Deep-level defects in silicon carbide(SiC)are critical to the control of the performance of SiC electron devices.In this paper,deep-level defects in aluminumion-implanted 4H-SiC after high-temperature annealingwere studied using electron paramagnetic resonance(EPR)spectroscopy at temperatures of 77 K and 123 K under different illumination conditions.Results showed that the main defect in aluminum ion-implanted 4H-SiC was the positively charged carbon vacancy(VC+),and the higher the doping concentration was,the higher was the concentration of VC+.Itwas found that the type of material defectwas independent of the doping concentration,although more VC+defects were detected during photoexcitation and at lower temperatures.These results should be helpful in the fundamental research of p-type 4H-SiC fabrication in accordance with functional device development. | Xiuhong Wang Zongwei Xua Mathias Rommel Bing Dong Le Song Clarence Augustine TH Tee Fengzhou Fang | 2019 | Nanotechnology and Precision Engineering2019，2，4： | 1 |
| 2 | Restoration of full‐length APC protein in SW 480 colon cancer cells induces exosome‐mediated secretion of DKK ‐4显示文摘 | Justin W. E. Lim Rommel A. Mathias Eugene A. Kapp Meredith J. Layton Maree C. Faux Antony W. Burgess Hong Ji Richard J. Simpson | 2012 | ELECTROPHORESIS2012，，12： | 1 |
| 3 | Modulation of lymphocyte subpopulations by extracorporeal photopheresis in patients with acute graft-versus-host disease or graft rejection显示文摘 | Katrin Lorenz Katharina Rommel Jiju Mani Nan Jin Inken Hilgendorf Anthony D. Ho Mathias Freund Michael Schmitt Anita Schmitt | 2015 | Leukemia & Lymphoma2015，，3： | 1 |
| 4 | Oncogenic H-Ras Reprograms Madin-Darby Canine Kidney (MDCK) Cell-derived Exosomal Proteins Following Epithelial-Mesenchymal Transition显示文摘 | Bow J. Tauro Rommel A. Mathias David W. Greening Shashi K. Gopal Hong Ji Eugene A. Kapp Bradley M. Coleman Andrew F. Hill Ulrike Kusebauch Janice L. Hallows David Shteynberg Robert L. Moritz Hong-Jian Zhu Richard J. Simpson | 2013 | Molecular & Cellular Proteomics2013，，8： | 1 |
| 5 | Surface-enhanced Raman scattering on nanodiamond-derived carbon onions显示文摘Annealing nanodiamonds(ND) at high temperatures up to 1700 ℃ is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is particularly interesting because of carbon onions' potential in the field of tribology and their application in ultra-charge/discharge devices. In this paper, a novel surface-enhanced Raman scattering technique that involves coating the sample with nanoscopic gold particles is proposed to characterize the NDs after different annealing treatments. Conventional Raman and surfaceenhanced Raman spectra were obtained, and the changes of peak parameters as the function of annealing temperature were evaluated. It was found that the widths of the D and the G peaks decreased with increasing annealing temperature, reflecting an improved order in the sp^2-hybridized carbon during the transformation from NDs to carbon onions. After annealing at 1700 ℃, the sp^2?carbon was highly ordered, indicating desirable electrical conductivity and lubricity. With increasing annealing temperature, the D peak showed a blue shift of almost30 cm^(-1), while the G peak merely shifted by 5 cm^(-1). For annealing temperatures above 1100 ℃, an increase of intensity ratio ID/IGwas observed. Compared to the uncoated area, red shifts of 0.5-2 cm^(-1) and of 5-9 cm^(-1) for the G and D peaks, respectively, were detected for the gold-coated area, which was due to the coupling of the plasmons and the phonons of the samples. | Ying Song Zongwei Xu Andreas Rosenkranz Mathias Rommel Changkun Shi Fengzhou Fang | 2019 | Nanotechnology and Precision Engineering2019，2，1： | 0 |
| 6 | Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC显示文摘Color centers in silicon carbide(SiC)are promising candidates for quantum technologies.However,the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging.In this study,helium ion-implanted 4H-SiC was characterized by atomic force microscopy(AFM),confocal photoluminescence(PL),and confocal Raman spectroscopy at room temperature.PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping.Lattice defects(C-C bond)were detected by continuous laser excitation at 532 nm and 638 nm,respectively.PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects.Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup,helium bubbles,as well as swelling. | Ying Song Zongwei Xu Rongrong Li Hong Wang Yexin Fan Mathias Rommel Jiayu Liu Georgy V.Astakhov Gregor Hlawacek Bingsheng Li Jun Xu Fengzhou Fang | 2020 | Nanomanufacturing and Metrology2020，3，3： | 0 |
| 7 | Foreword to the special issue on wide-bandgap(WBG)semiconductors:from fundamentals to applications显示文摘The development of new kinds of semiconductor material is a very attractive topic of scientific research and appliations.Graphene is considered as one of the most impressive 2D materials for many applications,like graphene-reinforced metal matrix nanocomposites.1 Widebandgap(WBG)semiconductors have received widespread attention in recent years because of their superior physical properties such as large band gap,high carrier mobility,and high thermal conductivity.Represented by silicon carbide(SiC)and gallium nitride(GaN),WBG semiconductor materials,therefore,can be operated in extreme working environments or conditions such as high temperature,high frequency,and high power. | Zongwei Xu Yidan Tang Mathias Rommel | 2020 | Nanotechnology and Precision Engineering2020，3，4： | 0 |
| 8 | Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide显示文摘As a promisingmaterial for quantumtechnology,silicon carbide(SiC)has attracted great interest inmaterials science.Carbon vacancy is a dominant defect in 4H-SiC.Thus,understanding the properties of this defect is critical to its application,and the atomic and electronic structures of the defects needs to be identified.In this study,density functional theorywas used to characterize the carbon vacancy defects in hexagonal(h)and cubic(k)lattice sites.The zero-phonon line energies,hyperfine tensors,and formation energies of carbon vacancies with different charge states(2−,−,0,+and 2+)in different supercells(72,128,400 and 576 atoms)were calculated using standard Perdew-Burke-Ernzerhof and Heyd-Scuseria-Ernzerhof methods.Results show that the zero-phonon line energies of carbon vacancy defects are much lower than those of divacancy defects,indicating that the former is more likely to reach the excited state than the latter.The hyperfine tensors of VC+(h)and VC+(k)were calculated.Comparison of the calculated hyperfine tensor with the experimental results indicates the existence of carbon vacancies in SiC lattice.The calculation of formation energy shows that the most stable carbon vacancy defects in the material are VC 2+(k),VC+(k),VC(k),VC−(k)and VC 2−(k)as the electronic chemical potential increases. | XiuhongWang Junlei Zhao Zongwei Xu Flyura Djurabekova Mathias Rommel Ying Song Fengzhou Fanga | 2020 | Nanotechnology and Precision Engineering2020，3，4： | 0 |
| 9 | Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser显示文摘Silicon-vacancy(VSi)centers in silicon carbide(SiC)are expected to serve as solid qubits,which can be used in quantum computing and sensing.As a new controllable color center fabrication method,femtosecond(fs)laserwriting has been gradually applied in the preparation of VSi in SiC.In this study,4H-SiCwas directlywritten by an fs laser and characterized at 293 K by atomic force microscopy,confocal photoluminescence(PL),and Raman spectroscopy.PL signals of VSi were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping.The influence of machining parameters on the VSi formation was analyzed,and the three-dimensional distribution of VSi defects in the fs laser writing of 4H-SiC was established. | Jiayu Liu Zongwei Xu Ying Song Hong Wang Bing Dong Shaobei Li Jia Ren Qiang Li Mathias Rommel Xinhua Gu Bowen Liu Minglie Hu Fengzhou Fang | 2020 | Nanotechnology and Precision Engineering2020，3，4： | 0 |
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