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25篇 您的检索式：作者名="NARASIMHAM B"

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	题名	作者	年代	出处	被引量
1	Charac- terization of digital single event transient pulse-widths in 130 nm and 90 nm CMOS technologies显示文摘	Narasimham B Bhuva B Schrimpf R	2007	IEEE Trans Nucl Sci2007，54，6：	1
2	Percutaneous nephrolithotomy through an intercostal approach显示文摘	NARASIMHAM DL JACOBSSON B VIJAYAN P	1997	Acta Radiol1997，38，：	1
3	Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes 显示文摘	GADLAGE M J AHLBIN J R NARASIMHAM B etal	2010	IEEE Transactions on Nu- clear Science2010，57，6：	1
4	Modeling total-dose effects for low- dropout voltage regulator 显示文摘	RAMACHANDRAN V NARASIMHAM B FLEET- WOOD D M	2006	IEEE Trans Nucl Sci2006，53，6：	1
5	Scal-ing trends in SET pulse widths in sub-100 nm bulk CMOS processes显示文摘	Gadlage M J Ahlbin J R Narasimham B		0，，06：	1
6	On-chip characterization of single event transient pulsewidths 显示文摘	Narasimham B Ramachandran V Bhuva B	2006	IEEE Transactions on Device and Materials Reliability2006，6，4：	1
7	Forced-air precooling of spherical foods in bulk, a parametric study显示文摘	SADASHIVE GOWDA B NARASIMHAM G S V L KRISHNA:M V	1997	Heat and Fluid Flow1997，18，：	1
8	Isotope shift studies in the spectra os NS and PS显示文摘	NARASIMHAM N A SUBRAMANIAN T K B	1969	J Mol Spectrosc1969，，29：	1
9	On- Chip Characterization of Single-Event Transient Pulsewidths 显示文摘	Narasimham B Ramachandran V Bhuva B L	2006	IEEE Trans on Device and Materials Reliability2006，6，4：	1
10	Forced air precooling of spherical foods显示文摘	B SADASHIVE GOUDA G S V L NARASIMHAM V KRISHAN MURTHY	1997	IntJ Heat and Fluid Flow1997，18，6：	1
11	Modeling total-dose effects for a low-dropout voltage regulator显示文摘	RAMACHANDRAN V NARASIMHAM B FLEETWOOD D M	2006	IEEE Trans Nucl Sci2006，53，6：	1
12	Foxed-air precooling of spherical foods in bulk: A parametric study 显示文摘	B SADASHIVE GOWDA G S V L NARASIMHAM M V KRISHNA MURTHY	1997	Heat and Fluid Flow1997，18，：	1
13	On the importance of the burst effect during drug release from polymer films 显示文摘	Narasimham B Langer R	1997	Polym Mater Sci Eng Proc1997，76，：	1
14	Quantifying the effect of guard rings and guard drains in mitigating charge collection and charge spread 显示文摘	NARASIMHAM B GAMBLES J W SHULER R L	2008	IEEE Trans Nuel Sci2008，55，6：	1
15	Modeling total-dose effects for low-dropout voltage regulator显示文摘	RAMACHANDRAN V NARASIMHAM B FLEET-WOOD D M	2006	IEEE Trans Nucl Sci2006，53，6：	1
16	Forced-air pre-cooling of spherical foods in bulk显示文摘	B Sadashive Gowda G S V L Narasimham M V Krishna	1997	Iht J Heat and Fluid Flow1997，18，：	1
17	Single-event charge collec- tion and upset in 40 nm dual- and triple-well bulk CMOS SRAMs显示文摘	CHATTERJEE I NARASIMHAM B MA- HATME N N	2011	IEEE Trans Nucl Sci2011，58，6：	1
18	On-Chip Char- acterization of Single-Event Transient Pulsewidths 显示文摘	Narasimham B Ramachandran V Bhuva B L	2006	IEEE Transactions on Device and Materials Reliability2006，6，4：	1
19	On-Chip Characterization of Single-Event Transient Pulsewidths显示文摘	Narasimham B Ramachandran V Bhuva B L	2006	IEEE Trans on Device and Materials Reliability2006，6，4：	1
20	Effects of guard bands and well contacts in mitigating long SETs in advanced CMOS processes显示文摘	Narasimham B Bhuva B L Schrimpf R D	2008	IEEE Transactions on Nuclear Science2008，55，3：	1

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