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1篇 您的检索式：作者名="P.K.Maurya"

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		题名	作者	年代	出处	被引量
	1	InAs/InAsSb Avalanche Photodiode (APD) for applicaions in long-wavelength infrared region显示文摘A generic numerical model of a long-wavelength Avalanche Photodiode (APD) based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N+ InAS/P-InAsSb avalanche photodiode structure for possible application in 2-5 μm wavelength region. The parameters such as gain,excess noise factor and their trade-off with variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process. The LWIR APD is expected to find application in optical gas sensor and in future generation of optical communication system.	P.K.Maurya H.Agarwal A.Singh P.Chakrabarti	2008	Optoelectronics Letters2008，4，5：	0

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