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31篇 您的检索式：作者名="PLOOG K"

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	题名	作者	年代	出处	被引量
1	Electrically tunable GHz oscillations in doped GaAs/AlAs superlattices 显示文摘	Hey R Ploog K H	1997	Phys Rev B1997，55，4：	1
2	Explosive Bifurcation to chaos in weakly coupled semiconductor superlattices 显示文摘	Grahn H T Ploog K H	1998	Phys Rev Lett1998，81，6：	1
3	Photoluminescence of AlGaAs/GaAs GaAs Quantum Well Heterostructure Grown by Molecular Beam Epitaxy显示文摘	Jung H Fischer A Ploog K	1984	Appl Phys1984，33，：	1
4	Compositional and doping superlattlices in Ⅲ-Ⅴ semiconductors显示文摘	D(O)HLER G H	1983	Adr Phys1983，32，：	1
5	Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-emitting Diodes 显示文摘	Waltereit P Brandt O Trampert A Grahn H T Menniger J Ramsteiner M Reiche M Ploog K H	2000	Nature2000，406，：	1
6	Coupling oe quantum dots on GaAs显示文摘	J P Kotthaus K Ploog	1990	Phys Rev Lett1990，64，：	1
7	Interface-State Measurements at Schottky Contacts: A New Admittance Technique 显示文摘	Wemer J H Ploog K Queisser H J	1986	Physical Review Letters1986，57，8：	1
8	显示文摘	Brandt O Waltereit P Ploog K H	2002	J Phys D: Appl Phys2002，35，：	1
9	Surface reconstructions of zinc-blende GaN/GaAs(001) inplasma-assisted molecular-beam epitaxy 显示文摘	BRANDT O YANG H JENICHEN B SUZUKI Y PLOOG K H	1995	Phys Rev B1995，52，：	1
10	Interfacestate measurements at schottky contacts:a new admittance technique显示文摘	WERNER J PLOOG K QUEISSER H J	1986	Phys Rev Lett1986，57，：	1
11	显示文摘	Dawerttz L Ploog K	1992	Phys Rev1992，46，：	1
12	显示文摘	Schubert E F Ploog K	1983	Jpn J Appl Phys1983，24，：	1
13	显示文摘	Daweritz L Ploog K	1992	Phys Rev1992，46，：	1
14	Frequency and Density Dependent Radiative Recombination Processes in III-V Quantum Wells and Superlattices显示文摘	Cingolani R Ploog K	1991	Advances in Physics1991，40，：	1
15	Microscopical structuring of solids by molecular beam epitaxy-spatially resolved materials synthesis 显示文摘	PLOOG K	1988	Angew Chem Int Ed Engl1988，27，5：	1
16	Weak localization in a distribution of magnetic flux tubes显示文摘	Bending S J Klitzing K V Ploog K	1990	Phys Rev Lett1990，65，：	1
17	M-plane GaN (1100) Grown on γ-LiAlO2(100): Nitride Semiconductors Free of Internal Electrostatic Fields 显示文摘	Waltereit P Brandt O Ramsteiner M Trampert A Grahn H T Menniger J Reiche M Ploog K H	2001	Journal of Crystal Growth2001，227，228：	1
18	Compositional and doping superlattices in Ⅲ-Ⅴsemiconductors显示文摘	Ploog K Dohler G H	1983	Adv Phys1983，32，：	1
19	The use of Si and be impurities for novel periodic doping structures in GaAs grown by molecular-beam epitaxy 显示文摘	PLOOG K FISCHER A KUNZEL H	1981	J Electro Soc1981，128，：	1
20	Weak localization in a distribution of magnetic flux tubes显示文摘	Bending S J yon Klitzing K Ploog K		0，，：	1

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