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27篇 您的检索式：作者名="Reshchikov"

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	题名	作者	年代	出处	被引量
1	Luminescence properties of defects in GaN 显示文摘	Reshchikov Michael A Morkoc Hadis	2005	J Appl Phys2005，97，06：	1
2	显示文摘	Yun F Reshchikov M A He L	2002	Appl Phys Lett2002，81，：	1
3	Yellow luminescence in ZnO layers grown on sapphire 显示文摘	RESHCHIKOV M A XIE J Q HERTOG B	2008	J Appl Phys2008，103，10：	1
4	Deep aeceptnrs in undoped GaN显示文摘	Reshchikov M A Shahedipour F Korotkov R Y	1999	Physica B1999，，：	1
5	A comprehensive review of ZnO materials and devices显示文摘	OZGUR U ALIVOV Y I LIU C TEKE A RESHCHIKOV M A DOGAN S AVRUTIN V CHO S J MORKOC H	2005	J Appl Phys2005，98，04：	1
6	Luminescence properties of defects in GaN显示文摘	Reshchikov M A Morkoc H	2005	J Appl Phys2005，97，06：	1
7	GaN epitaxy on thermally treated c-plane bulk ZnO substrate with O and Zn faces显示文摘	GU X RESHCHIKOV M A TEKE A	2004	Appl Phys Lett2004，84，13：	1
8	查看详情显示文摘	Ozgür (U) Alivov Y Liu C Teke A Reshchikov M Dogan S Avrutin V Cho S Morkoc H		0，，：	1
9	Dislocation density in GaN determined by photoelectrochemical and hot wet etching显示文摘	Visconti P Jones K M Reshchikov M A	2000	Appl Phys Lett2000，77，：	1
10	Luminescence Properties of Defects in GaN显示文摘	Reshchikov A Morko H	2005	Journal of Applied Physics2005，97，6：	1
11	A comprehensive review of ZnO materials and devices 显示文摘	Ozgur U Alivov Y I Liu C Teke A Reshchikov M A Dogan S Avrutin V Cho S J Morkoc H	2005	Journal of Applied Physics2005，98，04：	1
12	查看详情显示文摘	¨Ozg ¨ur ¨U Alivov Y I Liu C Teke A Reshchikov M A Do?gan S AVrutin V Cho S J Morkoc?H		0，，：	1
13	Dislocation density in GaN determined by photoelectroehemical and hot wet etching显示文摘	VISCONTI P JONES K M RESHCHIKOV M A	2000	APL2000，77，：	1
14	Dislocation Density in GaN Determined by Photoclectrochemical and Hot-wet Etching 显示文摘	Viscoti P Jones K M Reshchikov M A	2000	Applied Physics Letters2000，77，22：	1
15	Luminescence Properties of Defects in Ga N显示文摘	Reshchikov M A Morkoc H	2005	Journal of Applied Physics2005，97，06：	1
16	Strong suppression of the yellow lumines- cence in C-doped GaN in air ambient 显示文摘	Reshchikov M A	2006	Appl Phys Lett2006，89，23：	1
17	A comprehensive review of ZnO materials and devices显示文摘	Ozgur U Alivov Ya I Liu C Teke A Reshchikov M A Dogan S Avrutin V Cho S J Morkoc H J		0，，04：	1
18	Investigation of defects and polarity in GaN using hot wet etching AFM TEM and convergent beam electron diffraction 显示文摘	Visconti P Huang D Reshchikov M A	2001	Phys Stat Sol B2001，228，2：	1
19	Luminescence properties of defects in GaN显示文摘	Reshchikov M A Morkoc H	2005	J Appl Phys2005，97，06：	1
20	Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques 显示文摘	Visconti P Huang D Reshchikov M A	2002	Mater Sci Eng B2002，93，：	1

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