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12篇 您的检索式：作者名="Rubin Xie"

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		题名	作者	年代	出处	被引量
	1	Dominant negative LRP5 decreases tumorigenicity and metastasis of osteosarcoma in an an imal model显示文摘	Guo Y Rubin EM Xie J	2008	Clin Orthop Relat Res2008，466，9：	1
	2	Dominant Negative LRP5 Decreases Tumorigenicity and Metastasis of Osteosarcoma in an Animal Model显示文摘	Yi Guo MD PhD Elyssa M. Rubin MD Jun Xie BA Xiaolin Zi MD PhD Bang H. Hoang MD	2008	Clinical Orthopaedics and Related Research2008，，9：	1
	3	Dominant negative LRP5 decreases tumorigenicity and metastasis of osteosarcoma in an animal model显示文摘	Guo Y Rubin E M Xie J	2008	Clin Orthop Relat Res2008，466，9：	1
	4	Sonographic elasticity imaging of acute and chronic deep venous thrombosis in humans显示文摘	Rubin J M Xie H Kim K Weitzel W F Emelianov S Y Aglyamov S R	2006	J Ultrasound Med2006，25，：	1
	5	Dominant negative LRP5 decreases tumorigenicity and metastasis of osteosarcoma in an animal model显示文摘	Guo Y Rubin EM Xie J		0，，466：	1
	6	Frzb, a secreted Wnt antago- nist, decreases growth and invasiveness of fibrosareoma ceils associated with inhibition of Met signaling显示文摘	Guo Y Xie J Rubin E	2008	Cancer Res2008，68，9：	1
	7	Dominant negative LRP5 de- creases tumorigenicity and metastasis of osteosarcoma in an ani- mal model 显示文摘	Guo Y Rubin EM Xie J	2008	Clin Orthop Relat Res2008，466，9：	1
	8	Sonographic elasticity ima- ging of acute and chronic deep venous thrombosis in hu- mans 显示文摘	Rubin JM Xie H Kim K	2006	J Ultrasound Med2006，25，9：	1
	9	Inhibition of hedgehog signaling protects adult mice from diet- induced weight gain显示文摘	Buhman K K Wang L C Tang Y Swietlicki E A Kennedy S Xie Y Liu Z Y Burkly L C Levin M S Rubin D C Davidson N O	2004	Journal of Nutrition2004，34，11：	1
	10	Dominant negative LRP5 decreases tumorigenicity and metastasis of osteosarcoma in an animal model显示文摘	Guo Y Rubin EM Xie J	2008	Clin Orthop Relat Res2008，466，：	1
	11	Enhancement of the adolescent murine musculoskeletal system using low-level mechanical vibrations显示文摘	Xie L Rubin C Judex S	2008	J Appl Physiol2008，104，4：	1
	12	Design of GGNMOS ESD protection device for radiationhardened 0.18 μm CMOS process显示文摘In this paper,the ESD discharge capability of GGNMOS(gate grounded NMOS)device in the radiation-hardened 0.18μm bulk silicon CMOS process(Rad-Hard by Process:RHBP)is optimized by layout and ion implantation design.The effects of gate length,DCGS and ESD ion implantation of GGNMOS on discharge current density and lattice temperature are studied by TCAD and device simulation.The size of DCGS,multi finger number and single finger width of ESD verification structures are designed,and the discharge capacity and efficiency of GGNMOS devices in ESD are characterized by TLP test technology.Finally,the optimized GGNMOS is verified on the DSP circuit,and its ESD performance is over 3500 V in HBM mode.	Jianwei Wu Zongguang Yu Genshen Hong Rubin Xie	2020	Journal of Semiconductors2020，41，12：	0

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