|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors显示文摘CdZnTe(CZT)capacitive Frisch grid detectors can achieve a higher detecting resolution.The anode structure might have an important role in improving the weighting potential distribution of the detectors.In this paper, four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation,based on a 3-dimensional weighting potential analysis.The weighting potential distributions in modified anode devices(Model B, C and D)are optimized compared with a square device(Model A).In model C and D,the abrupt weighting potential can be well modified.However,with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D,the weighting potential does not vary too much. | MIN Jiahua SHI Zhubin QIAN Yongbiao SANG Wenbin ZHAO Hengyu TENG Jianyong LIU Jishan | 2009 | Nuclear Science and Techniques2009，20，1： | 2 |
| 2 | Preparation of Reactive Bright Blue Rare Earth Dyestuffs and Their Spectra Properties显示文摘Reactive bright blue rare earth dyestuffs were prepared by using reactive bright blue and lanthanum oxide,praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, dysprosium oxide, erbium oxide, lutetium oxide, yttrium oxide respectively for dyeing silk cloth.The degree of dyeing of reactive bright blue praseodymium and the degree of fixation of reactive bright blue gadolinium are the biggest, and 22.9% and 7 %are increased with that of reactive bright blue respectively.The spectra of reactive bright blue rare earth and reactive bright blue were studied by UV-VIS.In 200.00 ~ 800.00 nm, reactive bright blue has four absorption peaks, reactive bright blue rare earth has three absorption peaks; in 420.00 ~ 760.00 nm, reactive bright blue has two absorption peaks at 661.50 nm and 625.50 nm, respectively, and λmax is 661.50 nm; reactive bright blue rare earth has one absorption peak at 620.50, 618.00, 622.00, 623.00, 622.50, 619.50, 619.00, 621.00, 624.00, 620.00 nm adding La3+ ,Pr3+, Nd3+, Sm3+, Eu3+, Gd3+, Dy3+, Er3+, Lu3+, Y3+respectively. | Liu Xiaozhen Sang Wenbin | 2004 | Journal of Rare Earths2004，22，z1： | 2 |
| 3 | Vertically well-aligned ZnO nanowires generated with self-assembling polymers显示文摘 | He Ying Sang Wenbin Wang Junan | 2005 | Materials Chemistry and Physics2005，94，： | 1 |
| 4 | Primary study on the contact degradation mechanism of CdZnTe detectors显示文摘 | Sang Wenbin Jin Wei Zhang Qi | 2004 | Nuclear Inst and Methods in Physics Research2004，527，： | 1 |
| 5 | Comparison of Physical Passivation of Hg1-xCdxTe显示文摘 | Sang Wenbin Ju Jianhua Shi Weiming | 2000 | J Crystal Growth2000，，214215： | 1 |
| 6 | 显示文摘 | He Ying Sang Wenbin Wang Jun'an | 2005 | Mater Chem Phys2005，94，： | 1 |
| 7 | 显示文摘 | He Ying Sang Wenbin Wang Jun'an | 2005 | Mater Chem Phys2005，94，： | 1 |
| 8 | Investigation of annealing on Au/p - CdZnTe Contact 显示文摘 | Gong Hua Sang Wenbin Min Jiahua | 2006 | ICSICT Shanghai2006，，： | 1 |
| 9 | 显示文摘 | Sang Wenbin Qian Yongbiao Shi Weiming | 2002 | J Crystal Growth2002，，： | 1 |
| 10 | 显示文摘 | | 1996 | J Phys:Condens Matter1996，6，： | 1 |
| 11 | 显示文摘 | | 1996 | Advanced Materials for Optics and Electronic1996，6，： | 1 |
| 12 | 显示文摘 | Sang Wenbin Ju Jianhua Shi Weiming | 2000 | J Crystal Growth2000，，： | 1 |
| 13 | 显示文摘 | Li Wanwan Sang Wenbin Min Jiahua | 2002 | Semiconductor Science and Technology2002，17，10： | 1 |
| 14 | Improving the properties of CdZnTe Crystals by annealing processes 显示文摘 | Min Jiahua Sang Wenbin | | Rare Metal Materials and Engineering0，，： | 1 |
| 15 | Annealing High Resistivity CdZnTe Wafers under Controlled Cd/Zn Partial Pressures显示文摘In order to improve the performances of CdZnTe γ-ray detector, it is key issue to get the crystal with high quality. Equilibrium partial pressures, PCd and PZn, over Cd1-xZnx melt were estimated based on thermodynamic relationship and then Cd0.9Zn0.1Te wafers were annealed under controlled Cd/Zn partial pressures provided by Cd1-xZnx alloy reservoir. The experimental results show that when CdZnTe wafers are annealed under the equilibrium partial pressures provided by Cd0.99Zn0.01 alloy reservoir for 5 days or more at 1073 K, the resistivity of the wafer can be raised by 6 times and IR transmittance raised by 10% or more, the size and density of Te precipitates are greatly reduced.Moreover, losing of Zn from the surface can be avoided, which leads to improvement of the Zn radial distribution.In addition, the relationship between the electrical performances of the wafers and different controlled pressures is also discussed. | Wanwan LI, Wenbin SANG, Bin ZHANG, Jiahua MIN and Fang YUSchool of Material Science and Engineering, Jiading Campus, Shanghai University, Shanghai 201800, ChinaInstitute of Composites Materials, Shanghai Jiao Tong University, Shanghai 200030, China | 2004 | Journal of Materials Science & Technology2004，20，6： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员