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您的检索式：作者名="Seungwan Jeon"
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| 1 | Super-resolution localization photoacoustic microscopy using intrinsic red blood cells as contrast absorbers显示文摘Photoacoustic microscopy(PAM)has become a premier microscopy tool that can provide the anatomical,functional,and molecular information of animals and humans in vivo.However,conventional PAM systems suffer from limited temporal and/or spatial resolution.Here,we present a fast PAM system and an agent-free localization method based on a stable and commercial galvanometer scanner with a custom-made scanning mirror(L-PAM-GS).This novel hardware implementation enhances the temporal resolution significantly while maintaining a high signal-to-noise ratio(SNR).These improvements allow us to photoacoustically and noninvasively observe the microvasculatures of small animals and humans in vivo.Furthermore,the functional hemodynamics,namely,the blood flow rate in the microvasculature,is successfully monitored and quantified in vivo.More importantly,thanks to the high SNR and fast B-mode rate(500 Hz),by localizing photoacoustic signals from captured red blood cells without any contrast agent,unresolved microvessels are clearly distinguished,and the spatial resolution is improved by a factor of 2.5 in vivo.LPAM-GS has great potential in various fields,such as neurology,oncology,and pathology. | Jongbeom Kim Jin Young Kim Seungwan Jeon Jin Woo BAIK Seong Hee Cho Chulhong Kim | 2019 | Light(Science & Applications)2019，8，1： | 6 |
| 2 | High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications显示文摘Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)integrated on a Si substrate using direct wafer bonding.Structure of the In As QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In_(0.53)Ga_(0.47)As,while suppressing the generation of defects due to lattice relaxations.High-performance 2.6 nm In As QW photo-FETs were successfully demonstrated with a high on/off ratio of 10~5 and a high effective mobility of 2370 cm^(2)∕(V·s).The outstanding transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times.Further,we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared(SWIR;1.0–2.5μm)near 2μm thanks to bandgap engineering through In As QW structures.Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications. | DAEHWAN AHN SUNGHAN JEON †HOYOUNG SUH SEUNGWAN WOO RAFAEL JUMAR CHU DAEHWAN JUNG WON JUN CHOI DONGHEE PARK JIN-DONG SONG WOO-YOUNG CHOI JAE-HOON HAN | 2023 | Photonics Research2023，11，8： | 0 |
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