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| 1 | A Single Channel Measurement System For Brain MIT显示文摘A single channel measurement system for brain MIT has been built. The system is composed of an exciting source unit,a detecting unit,a rotating and controlling unit,and imaging unit. The experiment results of single channel measurements show that the system output versus the conductivity of the objects was an approximate linear relationship when the diameter of an object was about 9cm and its conductivity was in 0.1 S/m,0.7 S/m,2 S/m,6 S/m. The sensitivit yof the phase detector was 53 mV/degree from -10 to +10 degree. | QINMing-xing JIAOLi-cheng WANGCong LIShi-jun DONGXiu-zhen LUHua | 2004 | Chinese Journal of Biomedical Engineering(English Edition)2004，13，3： | 2 |
| 2 | Reviewonphasechangecoolstorageinair-conditioning system [J]显示文摘 | WangXiaolin(晓霖) ZhaiXiaoqiang(翟晓强) WangCong(王聪) ZhuBei(朱备) | 2007 | 建筑科学2007，58，3： | 1 |
| 3 | MesozoictectonicevolutionoftheYanshanfoldandthrustbelt,withemphasisonHebeiandLiaoningProvinces,northernChina显示文摘 | DAVISGA ZHENGYadong WANGCong | 2001 | GeologicalSocietyofAmericaBulletin2001，194，： | 1 |
| 4 | Synthesisandchar-acterizationofnoveltridentatetitaniumcomplexesandtheirapplicationtocopolymerizationandpolymeriza-tionofethylene显示文摘 | HuW Q SunXL WangCong etal | 2004 | Organometallics2004，23，： | 1 |
| 5 | AnoverviewofdeePwaterPIP elinelaying Teehnology显示文摘 | LiZhigang WangCong HeNing | 2008 | ChinaOeean Engineering2008，22，3： | 1 |
| 6 | Characterization of the negative thermal expansion material Zr_(1-x)Hf_xW_2O_8显示文摘The oxide ZrW2Osdisplays unusual property of isotropic negative thermal expansion in a large wide temperaturerange, which makes it have a number of important potential applications. The cubic Zrl-xHfxW2O8 (x = 0, 0.3, 0.5, 0.7, and1.0) weresynthesized by standard solid state reaction technique. The high and low temperature X-ray diffraction analysisindicate that the substitution of the Hf4+ for Zr4+ only leads to reducing the lattice constants, and the changes of negativethermal expansion coefficients are not obvious. The linear expansion coefficients of Zrl-xHfxW2O8 (x = 0, 0.3, 0.5, 0.7, and1.0) are about -6 × 10-6 K-1 in the temperature range of 298 to 973 K, while that of Zr0.5Hf0.5W2O8 is -9.6 × 10-6 K-1 from83 to 298 K. The phase transition temperatures from α-ZrW2O8 to β-ZrW2O8 structure were also determined by X-ray dif-fraction method. Thermogravimetric analysis (TGA) exhibits that Zrl-xHfxW2O8 is not hygroscopic in air. | SHENRong WANGCong WANGTianmin DONGCheng CHENHong LIANGJingkui | 2003 | Rare Metals2003，22，2： | 1 |
| 7 | Crystal Structures of Dy_2(WO_4)_3 and GdY(WO_4)_3显示文摘Two compounds, Dy2(WO4)3 and GdY(WO4)3; were synthesized by using the standard solid state reaction tech-nique. The crystal structure was determined by powder X-ray diffraction and Rietveld refinement method. It is found thatboth compounds have Eu2(WO4)3-type monoclinic structure, with space group C 2/c, Z = 4. The unit cell parameters ofDy2(WO4)3 are a = 0.75981(1) nm, b = 1.13220(1) nm, c = 1.13254(1) nm, and β= 109.8001(3)°, and those of GdY(WO4)3are a = 0.76175(1) nm, b = 1.13543(1) nm, c = 1.13496(2) nm, and β= 109.8015(13)°. Each W atom has four oxygen near-est neighbors, while each rare-earth atom is surrounded by eight oxygen atoms. WO4 tetrahedra share their four verticeswith REO8 (RE = Dy, Gd, or Y) trigondodecahedra and some REO8 trigondodecahedra share an edge with each other. Thephase transition and the magnetic properties were investigated by differential thermal analysis (DTA) and dc superconduct-ing quantum interference device (SQUID) magnetometer. | SHENRong WANGCong WANGTianmin DONGCheng CHENXiaolong LIANGJing | 2003 | Rare Metals2003，22，1： | 1 |
| 8 | Defects in La_2CuO_4 and La_(1.86)Sr_(0.14)CuO4 single crystals显示文摘La2CuO4 and La1.86Sr0.14CuO4 single crystals were obtained by traveling solvent floating zone method. There were five kinds of defects in these single crystals: cracks, inclusions, gas bubbles, unhomogeneous distribution of Sr2+, and substructures. CH3COOH aqueous solution was used to etch these single crystals, and the etch-pit density was calculated.The formation mechanism of these defects was discussed. It is suggested that the good preparation of raw materials and the stringent growth conditions play an important role in growing high quality single crystals. | YANGWei JIALiansuo CHENXiaolong WANGCong | 2005 | Rare Metals2005，24，1： | 0 |
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