3篇
您的检索式：作者名="Weikun Guo"
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Hierarchical approach to exact symbolic analysis of large analog circuits显示文摘 | Sheldon X D Tan Weikun Guo Zhenyu Qi | 2005 | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems2005，24，8： | 1 |
| 2 | In-situ construction of hybrid artificial SEI with fluorinated siloxane to enable dendrite-free Li metal anodes显示文摘Lithium(Li)metal anode holds great promise for high-energy-density rechargeable batteries.However,it suffers from the Li dendrites growth and uncontrollable side reactions with electrolyte due to the unstable solid electrolyte interphase(SEI)layer.Herein,we propose a facile strategy for the in-situ fabricate of organic-inorganic composite artificial SEI layers on Li surfaces,which consist of organic fluorinated siloxane and inorganic LiF-rich phases.The hybrid artificial SEI endows high mechanical strength(13.1 GPa)and Liþtransfer number(0.62).Such robust SEI protective layers can not only guide uniform nucleation and deposition of Li metal by facilitating uniform Li-ion distribution,but also prevent unfavourable side reactions.Accordingly,the protected metallic lithium anode(PMTFPS-Li)anode enables stable Li plating/stripping performance in symmetric cells for more than 300 h at 4 mA$h/cm^(2)under a high areal capacity of 4 mA/cm^(2).Moreover,the PMTFPS-Li/S cells could maintain more than 300 stable cycles at 0.5C and the PMTFPS-Li/LFP cells present excellent cycling performance(400 cycles at 1C)and enhanced rate capability(110.4 mA$h/g at 3 C).This work will inspire the design of artificial SEI on Li anodes for advanced Li metal batteries. | Lei Wei Zhaoqing Jin Jianhao Lu Yang Guo Zilong Wang Gaoping Cao Jingyi Qiu Anbang Wang Weikun Wang | 2023 | Journal of Materiomics2023，9，2： | 0 |
| 3 | Progress in efficient doping of Al-rich AlGaN显示文摘The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wavelength of 275 nm,there is still a huge gap in comparison with GaN-based visible light-emitting diodes(LEDs),mainly attributed to the inefficient doping of AlGaN with increase of the Al composition.First,p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency.Although p-GaN cladding layers are widely adopted as a compromise,the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected.While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%,resulting in a low electrical efficiency in sub-250 nm UV-LEDs.This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN,meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail. | Jiaming Wang Fujun Xu Lisheng Zhang Jing Lang Xuzhou Fang Ziyao Zhang Xueqi Guo Chen Ji Chengzhi Ji Fuyun Tan Xuelin Yang Xiangning Kang Zhixin Qin Ning Tang Xinqiang Wang Weikun Ge Bo Shen | 2024 | Journal of Semiconductors2024，45，2： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员