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| 1 | Polyplex interaction strength as a driver of potency during cancer immunotherapy显示文摘 | Shannon d. Tsai James I. Andorko Xiangbin Zeng Joshua M. Gammon Christopher M. dewell | 2018 | Nano Research2018，11，10： | 2 |
| 2 | Changes of serum sex hormone levels and MT mRNA expression in rats orally exposed to cadmium显示文摘 | Xiangbin Zeng Taiyi Jin Yuanfen Zhou | 2003 | Toxicology2003，186，12： | 1 |
| 3 | 显示文摘 | Liu Shijian Zeng Xiangbin Chu Junhao | 2004 | Microelectronics Journal2004，35，7： | 1 |
| 4 | Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering显示文摘 | Liu Shijian Zeng Xiangbin Chu Junhao | 2004 | Microelectronics Journal2004，35，7： | 1 |
| 5 | An approach for improving the carriers transport properties of a-Si:H/c-Si heterojunction solar cells with efficiency of more than 27%显示文摘 | Xixing Wen Xiangbin Zeng Wugang Liao Qingsong Lei Sheng Yin | 2013 | Solar Energy2013，，： | 1 |
| 6 | Changes of serum sex hormone levels and MT mRNA expression in rats orally exposed to cadmium显示文摘 | Xiangbin Zeng Taiyi Jin Yuanfen Zhou | 2003 | Toxicology2003，186，12： | 1 |
| 7 | Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics显示文摘Tremendous efforts have been devoted to preparing the ultrathin two-dimensional(2D)transition-metal dichalcogenides(TMDCs)and TMDCS-based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade.However,to fulfill the demands for practical applications,the batch production of 2D TMDCs with high quality and large area at the mild condi-tions is still a challenge.This feature article reviews the state-of-the art research progresses that focus on the preparation and the applications in elec-tronics and optoelectronics of 2D TMDCs and their van der Waals hetero-junctions.First,the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined.Then,recent progress on the application of fabricated 2D TMDCs based materials is revealed with particular attention to electronic(eg,field effect transistors and logic circuits)and optoelectronic(eg,photodetectors,photovoltaics,and light emitting diodes)devices.Finally,the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions. | Min Wu Yonghong Xiao Yang Zeng Yuanliang Zhou Xiangbin Zeng Lining Zhang Wugang Liao | 2021 | InfoMat2021，3，4： | 1 |
| 8 | Structural, optical and electrical properties of ZnO: B thin films with different thickness for bifacial a-Si:H/c-Si heterojunction solar cells显示文摘 | Dong XU Sheng YIN Xiangbin ZENG Song YANG Xixing WEN | 2017 | Frontiers of Optoelectronics2017，10，1： | 1 |
| 9 | Texturization and rounded process of silicon wafers for heterojunction with intrinsic thin-layer solar cells显示文摘 | Kunpeng MA Xiangbin ZENG Qingsong LEI Junming XUE Yanzeng WANG Chenguang ZHAO | 2014 | Frontiers of Optoelectronics2014，7，1： | 1 |
| 10 | Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering 显示文摘 | Liu Shijian Zeng Xiangbin Chu Junhao | 2004 | Microelectronics Journal2004，35，7： | 1 |
| 11 | Influence of substrate temperature on in situ-textured ZnO thin films grown by MOCVD显示文摘微观结构上的底层温度的影响,电、光的性质在电影由金属制作了的 situtextured 锌氧化物(ZnO ) ,器官的化学蒸汽免职(MOVCD ) 被调查了。结果显示底层温度在 ZnO 薄电影的准备起了一个很重要的作用。与涨温度,第一 ZnO 晶体对底层垂直,然后,他们被养向底层倾向,最后在层成年然而并非常规的 ZnO 晶体。因而, ZnO 电影表面形态学变化了从对金字塔结构光滑然后消失渐渐地。而且,它也在这研究被发现 ZnO 电影与高 crystallinity 被描绘,低抵抗力(2.17 ????? 眠癡来極楤杮?? | Yajuan ZHENG Xiangbin ZENG Xiaohu SUN Diqiu HUANG | 2013 | Frontiers of Optoelectronics2013，6，3： | 0 |
| 12 | Influence of process parameters on band gap of AI-doped ZnO film显示文摘This paper presents the influence of process parameters, such as argon (Ar) flow rate, sputtering power and substrate temperature on the band gap of Al-doped ZnO film, Al-doped ZnO thin films were fabricated by radio frequency (RF) magnetron sputtering technology and deposited on polyimide and glass substrates. Under different Ar flow rates varied from 30 to 70 sccm, the band gap of thin films were changed from 3.56 to 3.67 eV. As sputtering power ranged from 125 to 200 W, the band gap was varied from 3.28 to 3.82 eV; the band gap was between 3.41 and 3.88 eV as substrate temperature increases from 150℃ to 300℃. Furthermore, the correlation between carrier concentration and band gap was investigated by HALL. These results demonstrate that the band gap of the Al-doped ZnO thin film can be adjusted by changing the Ar flow rate, sputtering power and substrate temperature, which can improve the performance of semiconductor devices related to Al-doped ZnO thin film. | Diqiu HUANG Xiangbin ZENG Yajuan ZHENG Xiaojin WANG Yanyan YANG | 2013 | Frontiers of Optoelectronics2013，6，1： | 0 |
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