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| 1 | Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers显示文摘Herein,we report the fabrication of high-performance transparent quantum-dot light-emitting diodes(Tr-QLEDs)with ZnO/ZnMgO inorganic double electron-transport layers(ETLs).The ETLs effectively suppress the excess electron injection and facilitate charge balance in the Tr-QLEDs.The thick ETLs as buffer layers can also withstand the plasma-induced damage during the indium tin oxide sputtering.These factors collectively contribute to the development of Tr-QLEDs with improved performance.As a result,our Tr-QLEDs with double ETLs exhibited a high transmittance of 82%at 550 nm and a record external quantum efficiency of 11.8%,which is 1.27 times higher than that of the devices with pure ZnO ETL.These results indicate that the developed ZnO/ZnMgO inorganic double ETLs could offer promising solutions for realizing high-efficiency Tr-QLEDs for next-generation display devices. | Nan Zhang Xiangwei Qu Quan Lyu Kai Wang Xiao Wei Sun | 2021 | Photonics Research2021，9，10： | 2 |
| 2 | On the voltage behavior of quantum dot light-emitting diode显示文摘The origin of the efficiency drop of quantum dot light-emitting diode(QLED)under consecutive voltage sweeps is still a puzzle.In this work,we report the voltage sweep behavior of QLED.We observed the efficiency drop of red QLED with ZnMgO electron transport layer(ETL)under consecutive voltage sweeps.In contrast,the efficiency increases for ZnO ETL device.By analyzing the electrical characteristics of both devices and surface traps of ZnMgO and ZnO nanoparticles,we found the efficiency drop of ZnMgO device is related to the hole leakage mediated by trap state on ZnMgO nanoparticles.For ZnO device,the efficiency raise is due to suppressed electron leakage.The hole leakage also causes rapid lifetime degradation of ZnMgO device.However,the efficiency and lifetime degradation of ZnMgO device can be eliminated with shelf aging.Our work reveals the distinct voltage sweep behavior of QLED based on different ETLs and may help to understand the lifetime degradation mechanism in QLED. | Xiangwei Qu Jingrui Ma Pai Liu Kai Wang Xiao Wei Sun | 2023 | Nano Research2023，16，4： | 0 |
| 3 | Impedance spectroscopy for quantum dot light-emitting diodes显示文摘Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs. | Xiangwei Qu Xiaowei Sun | 2023 | Journal of Semiconductors2023，44，9： | 0 |
| 4 | Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment显示文摘The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs. | Depeng Li Jingrui Ma Wenbo Liu Guohong Xiang Xiangwei Qu Siqi Jia Mi Gu Jiahao Wei Pai Liu Kai Wang Xiaowei Sun | 2023 | Journal of Semiconductors2023，44，9： | 0 |
| 5 | Emergence of highly pathogenic avian influenza A(H5N8)clade 2.3.4.4b viruses in grebes in Inner Mongolia and Ningxia,China,in 2021显示文摘Highly pathogenic avian influenza(HPAI)subtype H5Nx viruses have spread globally and are a major concern for poultry,wild birds,mammals,and even humans(de Vries et al.2015;Zeng et al.2022).The hemagglutinin(HA)genes of H5 subtype viruses have evolved into multiple clades and some of these clades have been further divided into subclades(Cui et al.2022).Clade 2.3.4.4H5N8 HPAI viruses(HPAIVs)have caused several waves of disease outbreaks in wild birds and domestic poultry(Wang et al.2022). | Qiuzi Xu Xinru Lü Yi Li Hua Luo Zhen Zhang Xiang Li Rongxiu Qin Qing An Fengyi Qu Zhenliang Zhao Chengbo Zhang Weidong Wang Yuecheng Li Yajun Wang Xiangwei Zeng Zhijun Hou Jingqiang Ren Yulong Wang Yanbing Li Hongliang Chai | 2024 | Journal of Integrative Agriculture2024，23，1： | 0 |
| 6 | Erratum to: On the voltage behavior of quantum dot light-emitting diode显示文摘Erratum to Nano Research,2023,16(4):5511–5516 http://gffzzd3cc09b8251d45dfsfnp0pwpqck0b6w06.ffgz.tsg.suse.edu.cn/10.1007/s12274-022-5106-8 The title in the article was unfortunately mispresented on page 5511.The title of the article should be corrected to“On the voltage sweep behavior of quantum dot light-emitting diode”.Instead of On the voltage behavior of quantum dot light-emitting diode It should read On the voltage sweep behavior of quantum dot light-emitting diode. | Xiangwei Qu Jingrui Ma Pai Liu Kai Wang Xiao Wei Sun | 2024 | Nano Research2024，17，4： | 0 |
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