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| 1 | Effects of SiO_2 and TiO_2 on resistance stabilities of flexible indium-tin-oxide films prepared by ion assisted deposition显示文摘Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiO2 on the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. ITO films with SiO2 buffer layer have better resistance stabilities compared to ones with TiO2 buffer layer after the ITO films are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions. | LI Yuqiong YU Zhinong WANG Wuyu FAN Yuejiang DING Zhao XUE Wei | 2009 | Rare Metals2009，28，6： | 2 |
| 2 | Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition 显示文摘 | Yu Zhinong Leng Jian Xue Wei | 2012 | Appl Surf Sci2012，258，7： | 1 |
| 3 | Degradation and Self-recovery of Polycrystalline Silicon TFT CMOS Inverters Under NBTI Stress显示文摘Degradation and self-recovery of polycrystalline Silicon(poly-Si)Thin film transistor(TFT)by using complementary metal oxide semiconductor(CMOS)inverter were investigated.Under DC stress,degradation mechanisms were clarified by comparing the Voltage transfer characteristics(VTC)of fresh and stressed inverters.It is determined that Negative bias temperature instability(NBTI)of p-TFT dominates the degradation of the inverter under zero bias DC stress.After removing the stress,the VTC continues to be degraded,because the interface trap-states and the grain boundary trapstates increase due to hydrogen species diffusion.It is found out that the VTC is shifted to its right side severely with negative bias stress of VIN.The NBTI of p-TFT is enhanced and the NBTI of n-TFT also plays a role on the degradation.When removing the negative bias stress,the self-recovery of NBTI of nTFT and the continuing degradation of NBTI of p-TFT become competing mechanisms,together controlling the VTC after-stress behavior.Consequently,the continuing degradation of NBTI of p-TFT is restrained by selfrecovery of NBTI of n-TFT. | GUO Jian YU Zhinong YAN Wei SHI Dawei XUE Jianshe XUE Wei | 2019 | Chinese Journal of Electronics2019，28，4： | 1 |
| 4 | 显示文摘 | Yu Zhinong Seo J W Yu S J | 2002 | Surf Coat Teehn- ol2002，162，： | 1 |
| 5 | Synthesis and Surface Activity of Biquaternary Ammonium Salt Gemini Surfactants with Ester Bond显示文摘The synthesis and surface activity of gemini surfactants with ester bond as spacer are described.Their critical micelle concentrations (CMC) are much lower than that of conventional surfactants,i.e.,1.62×10-5,1.38×10-5,1.28×10-5 mol·L-1 for gemini Ⅰ,Ⅱ and Ⅲ respectively.Surface tension at the CMC of gemini Ⅰ,Ⅱ and Ⅲ were 36.4,38.5,41.2 mN·m-1.The physico-chemical properties such as Krafft points,foaming abilities and emulsifying power were also investigated.It is found that the title compounds have low Krafft points and show good solubility in water.The gemini surfactants synthesized also exhibit good foaming properties and excellent emulsifying power toward toluene.The foaming abilities and emulsifying power increase with the increase in carbon number of hydrophobic chain,and this might be caused by the sheer viscosity of different gemini surfactant solution. | GAO Zhinong TAI Shuxin ZHANG Qi ZHAO Yu LU Bo GE Yushu HUANG Li TANG Xiaoyan | 2008 | Wuhan University Journal of Natural Sciences2008，13，2： | 1 |
| 6 | Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition显示文摘 | Zhinong Yu Jian Leng Wei Xue | 2012 | Applied Surface Science2012，2587，： | 1 |
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