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| 1 | A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor显示文摘A low power 8T global shutter pixel with extended FD voltage swing range is proposed for large format high speed CMOS image sensor. The pixel has a negative threshold reset transistor, two in-pixel source followers, and a sample-and-hold circuit. The in-pixel first source follower is employed for reducing the pixel average current and maximum transient current. The negative threshold reset transistor is applied to extend the voltage swing of FD. Using pixel level sample-and-hold circuit, the k TC noise on FD node can be effectively nullified by correlated double sampling operation. A high speed 1000 fps 256×256 CMOS image sensor is implemented in 0.18 μm CMOS process. Two 10-bit cyclic ADC arrays are integrated in this prototype sensor chip. The active area of the chip is 10 mm×7 mm with a pixel size of 14 μm×14 μm. The developed sensor achieves an average current of 23 n A per pixel, a maximum transit current per pixel as low as 1113 n A, and a large FD voltage swing of 1.78 V. The sensor temporal noise level is 103 e-and full well capacity has 27000 e-which results in 48.3 d B signal dynamic range. | ZHOU YangFan CAO ZhongXiang HAN Ye LI QuanLiang SHI Cong DOU RunJiang QIN Qi LIU Jian WU NanJian | 2015 | Science China(Information Sciences)2015，58，4： | 4 |
| 2 | A 256×256 time-of-flight image sensor based on center-tap demodulation pixel structure显示文摘This paper proposes a 256×256 time-of-flight(TOF) image sensor based on the center-tap(CT)demodulation pixel structure. The image sensor can capture both the two-dimensional(2D) high speed image and the three-dimensional(3D) depth image. The CT pixel consists of two split pinned photodiode(PPD)regions and two pairs of transfer transistors. The transfer transistors adopt a non-uniform doped channel(NUDC) structure, which can increase the electron transfer speed along the transfer channel and eliminate the image lag for high speed imaging. The pixel size is 10 μm×10 μm, and we design the implementation process of the pixel to increase the electron transfer speed. The sensor is fabricated in a 0.18 μm 1P5 M CMOS image sensor process. Test results show that it can capture the 430-fps intensity image and the 90-fps depth image in two different imaging modes. The rectified non-linearity within the 1.0–7.5 m depth measurement range achieves less than 3 cm, and the measurement accuracy achieves 4.0 cm at 2.5 m, corresponding to the relative error of1.6%. | Zhe CHEN Shan DI Zhongxiang CAO Qi QIN Fei JI Liyuan LIU Nanjian WU | 2016 | Science China(Information Sciences)2016，59，4： | 4 |
| 3 | 抗辐射低噪声CMOS图像传感器设计技术研究显示文摘为满足航天应用对大面阵高动态CMOS图像传感器的需求,对噪声优化与辐射加固等关键技术进行了深入研究。基于系统架构的增益级与双相关双采样设计优化、基于采样电路的时序改进,实现了对系统噪声的多层次优化;基于像素级与电路级的总剂量辐射加固与单粒子闩锁辐射加固设计,实现了对100k rad(Si)总剂量和99.8 MeV·cm2/mg单粒子效应的免疫。研究成果已成功应用于一款64M像素超大面阵高性能CMOS图像传感器产品。流片测试结果显示,抗总剂量辐射能力优于100k rad(Si)、暗电流与噪声随辐射增长率提升了一个数量级;抗单粒子闩锁能力优于99.8 MeV·cm2/mg;在整个辐射环境下读出噪声不超过5e-;本征动态范围高达75dB。 | 郭仲杰 吴龙胜 | 2020 | 传感技术学报2020，33，2： | 2 |
| 4 | Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method显示文摘The dark signal degradation of the CMOS image sensor(CIS) was induced by neutron radiation,and it was modeled by Geant4, which is a three-dimensional Monte Carlo code. The simplified model of the CIS array was established according to the actual pixel geometry, material, and doping concentration. Nuclear elastic interaction and capture interaction were included in the physical processes, and the displacement damage dose in the space charge region of the pixel was calculated. The mean dark signal and dark signal distribution were modeled using Geant4, and the physical mechanisms were analyzed. The modeling results were in good agreement with the experimental and theoretical results. | Yuanyuan XUE Zuun WANG Wei CHEN Baoping HE Zhibin YAO Minbo LIU Jiangkun SHENG Wuying MA Guantao DONG Junshan JIN | 2018 | Science China(Information Sciences)2018，61，6： | 2 |
| 5 | An Improved Global Shutter Pixel with Extended Output Range and Linearity of Compensation for CMOS Image Sensor显示文摘An improved global shutter pixel structure with extended output range and linearity of compensation is proposed for CMOS image sensor. The potential switching of the sample and hold capacitor bottom plate outside the array is used to solve the problem of the serious swing limitation, which will attenuate the dynamic range of the image sensor. The non-linear problem caused by the substrate bias effect in the output process of the pixel source follower is solved by using the mirror FD point negative feedback self-establishment technology outside the array. The approach proposed in this paper has been verified in a global shutter CMOS image sensor with a scale of 1024×1024 pixels. The test results show that the output range is expanded from 0.95 V to 2 V, and the error introduced by the nonlinearity is sharply reduced from280 mV to 0.3 mV. Most importantly, the output range expansion circuit does not increase the additional pixel area and the power consumption. The power consumption of linearity correction circuit is only 23.1μW, accounting for less than 0.01% of the whole chip power consumption. | GUO Zhongjie YU Ningmei WU Longsheng | 2021 | Chinese Journal of Electronics2021，30，1： | 1 |
| 6 | 通用工业相机的炸点瞬时位置测量模拟研究显示文摘为解决当前已有炸点空间位置探测系统存在的结构复杂、成本昂贵的问题,进行了基于通用工业相机的炸点瞬时位置测量的模拟研究,设计了LED瞬态闪光单元,通过光电传感器探测LED产生的光信号并转换为电信号。经过信号处理,根据信号的幅值控制2台普通工业相机同时曝光进行抓拍,然后对采集的图像进行数字图像处理,获取2幅图像中爆炸光斑中心的位置坐标,再结合2个相机之间的相对位置关系,最终解算出炸点的空间位置坐标。实验结果表明:在距离测量系统24 m、32 m、48 m处,最大误差绝对值在水平X方向为127 mm,在竖直Y方向为68 mm,在深度Z方向为279 mm。系统具有响应速度快、精度高、成本低等优点,满足系统探测要求。 | 黄战华 张光 曹雨生 张晗笑 申苜弘 | 2021 | 应用光学2021，42，5： | 0 |
| 7 | 基于Matlab建模的数字相关双采样两步单斜ADC研究显示文摘提出并仿真验证了一种用于互补金属半导体氧化物图像传感器的10位数字相关双采样列级两步单斜模数转换器.数字相关双采样通过减法器实现,使像素复位信号与像素曝光信号的量化结果在数字域作差,降低了列级读出电路中非理想因素的影响;比较器采用基尔伯特单元,避免了传统两步单斜ADC中因记忆电容的使用所导致的时钟馈通和斜坡斜率误差的问题.通过在Matlab中建模仿真验证,ADC的信噪失真比为61.4 dB,有效位为9.9 bit,量化周期为140个时钟周期.与传统10位数字相关双采样单斜ADC相比,可节省2170个时钟周期,同时其平均FPN较传统两步单斜结构可以降低0.81 LSB. | 徐江涛 徐爽 | 2021 | 南开大学学报(自然科学版)2021，54，4： | 0 |
| 8 | 用于像素阵列扫描控制的低功耗RISCV处理器显示文摘在高能物理实验中,需要在探测器范围内准确测量粒子的时间和位置信息,因此需要大型像素阵列。当像素探测器在有限的区域内形成统一的模块时,多控制器互连和像素阵列的控制将变得复杂。文中提出了一种可重构的数字读出系统来克服这个问题。处理器包括三部分:核心模块、通信接口和像素扫描阵列。处理器的核心模块是基于RISCV指令集的低功耗CPU;通信接口能够在核心控制器之间进行数据交换和程序烧录;像素扫描阵列支持256×256像素点,并且扫描面积和像素阈值可以根据不同情况下的要求进行配置。该原型已成功建立并通过仿真验证,130 nm工艺下处理器面积为7.68 mm^(2),在40 MHz频率下的动态功耗为53.0249 mW。 | 方倪 徐德利 王东 沈凡 龚祺 | 2022 | 电子设计工程2022，30，12： | 0 |
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